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參數資料
| 型號： | FGH40N6S2D |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode |
| 中文描述： | 75 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 封裝： | TO-247, 3 PIN |
| 文件頁數： | 3/9頁 |
| 文件大小： | 208K |
| 代理商： | FGH40N6S2D |
2002 Fairchild Semiconductor Corporation
FGH40N6S2D RevA4
F
Typical Performance Curves
T
J
= 25
°
C unless otherwise noted
Figure 1. DC Collector Current vs Case
Temperature
Figure 2. Minimum Switching Safe Operating Area
Figure 3. Operating Frequency vs Collector to
Emitter Current
Figure 4. Short Circuit Withstand Time
Figure 5. Collector to Emitter On-State Voltage
Figure 6. Collector to Emitter On-State Voltage
T
C
, CASE TEMPERATURE (
o
C)
I
C
,
50
10
0
20
25
75
100
125
150
90
40
60
30
50
PACKAGE LIMITED
80
70
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
700
0
I
C
,
300
400
200
100
500
600
0
50
75
25
125
T
J
= 150
o
C, R
G
= 3
, V
GE
= 15V, L = 100
μ
H
100
f
M
,
1
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
1
100
60
10
30
1000
10
T
J
= 125
o
C, R
G
= 3
, L = 200
μ
H, V
CE
= 390V
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
R
θ
JC
= 0.27
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
T
C =
75
o
C
V
GE
= 10V
V
GE
= 15V
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
S
,
t
S
,
μ
s
9
11
12
15
9
5
300
500
t
SC
I
SC
450
13
14
11
13
7
250
350
400
10
16
3
V
CE
= 390V, R
G
= 3
, T
J
= 125
o
C
0.0
0.4
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
0
5
10
0.6
1.2
1.4
20
15
40
T
J
= 25
o
C
0.2
25
0.8
1.0
T
J
= 125
o
C
T
J
= 150
o
C
DUTY CYCLE < 0.5%, V
GE
=10V
PULSE DURATION = 250
μ
s
35
30
1.6
1.8
2.0
2.2
2.4
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
DUTY CYCLE < 0.5%, V
GE
=15V
PULSE DURATION = 250
μ
s
T
J
= 150
o
C
T
J
= 25
o
C
T
J
= 125
o
C
0
5
10
20
15
40
25
35
30
0.0
0.4
0.6
1.2
1.4
0.2
0.8
1.0
1.6
1.8
2.0
2.2
2.4
相關PDF資料 |
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|---|---|
| FGH40N6S2 | 600V, SMPS II Series N-Channel IGBT |
| FGP40N6S2 | Switch Mode Power Supply; Output Power:240W; No. of Outputs:1; Output 1 VDC +:24VDC; Output Current 1:10A; Power Supply Mounting:Chassis; Leaded Process Compatible:Yes; Output Current:10A; Output Power Max:240W; Output Voltage:24VDC RoHS Compliant: Yes |
| FGB40N6S2 | Switch Mode Power Supply; Output Power:240W; No. of Outputs:1; Output 1 VDC +:48VDC; Output Current 1:5A; Power Supply Mounting:Chassis; Output Current:5A; Output Power Max:240W; Output Voltage:48VDC; Series:JWS RoHS Compliant: Yes |
| FGH50N3 | 300V, PT N-Channel IGBT |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FGH40N6S2D | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247 |
| FGH40T100SMD | 功能描述:IGBT 晶體管 1000V 40A Field Stop Trench IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FGH40T120SMD | 制造商:Fairchild Semiconductor Corporation 功能描述:1200V 40A FS2 TRENCH IGBT - Rail/Tube |
| FGH40T120SMD_F155 | 制造商:Fairchild Semiconductor Corporation 功能描述:1200V 40A FS2 TRENCH IGBT - Rail/Tube 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT 1200V 40A TRENCH TO-247-3 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT 1200V 80A 555W TO247-3 制造商:Fairchild Semiconductor Corporation 功能描述:RAIL / 1200V 40A FS2 Trench IGBT |
| FGH40T65SPD_F155 | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT 650V 80A 267W TO-247 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT 650V 80A 268W TO-247 |
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