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參數資料
| 型號： | FGP40N6S2 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Switch Mode Power Supply; Output Power:240W; No. of Outputs:1; Output 1 VDC +:24VDC; Output Current 1:10A; Power Supply Mounting:Chassis; Leaded Process Compatible:Yes; Output Current:10A; Output Power Max:240W; Output Voltage:24VDC RoHS Compliant: Yes |
| 中文描述： | 75 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁數： | 2/8頁 |
| 文件大?。?/td> | 176K |
| 代理商： | FGP40N6S2 |
2003 Fairchild Semiconductor Corporation
FGH40N6S2 / FGP40N6S2 / FGB40N6S2 RevA5
F
Package Marking and Ordering Information
Electrical Characteristics
T
J
= 25
°
C unless otherwise noted
Off State Characteristics
BV
CES
Collector to Emitter Breakdown Voltage I
C
= 250
μ
A, V
GE
= 0
BV
ECS
Emitter to Collector Breakdown Voltage I
C
= -10mA, V
GE
= 0
I
CES
Collector to Emitter Leakage Current
On State Characteristics
V
CE(SAT)
Collector to Emitter Saturation Voltage
Dynamic Characteristics
Q
G(ON)
Gate Charge
Switching Characteristics
SSOA
Switching SOA
Thermal Characteristics
R
θ
JC
Thermal Resistance Junction-Case
Device Marking
40N6S2
40N6S2
40N6S2
40N6S2
Device
FGH40N6S2
FGP40N6S2
FGB40N6S2
FGB40N6S2T
Package
TO-247
TO-220AB
TO-263AB
TO-263AB
Reel Size
Tube
Tube
Tube
330mm
Tape Width
N/A
N/A
N/A
24mm
Quantity
30
50
50
800
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
600
20
-
-
-
-
-
-
-
-
-
-
V
V
μ
A
mA
nA
V
CE
= 600V
T
J
= 25
°
C
T
J
= 125
°
C
250
2.0
±250
I
GES
Gate to Emitter Leakage Current
V
GE
= ± 20V
I
C
= 20A,
V
GE
= 15V
T
J
= 25
°
C
T
J
= 125
°
C
-
-
1.9
1.7
2.7
2.0
V
V
I
C
= 20A,
V
CE
= 300V
I
C
= 250
μ
A, V
CE
= V
GE
I
C
= 20A, V
CE
= 300V
V
GE
= 15V
V
GE
= 20V
-
-
35
45
4.3
6.5
42
55
5.0
8.0
nC
nC
V
V
V
GE(TH)
V
GEP
Gate to Emitter Threshold Voltage
Gate to Emitter Plateau Voltage
3.5
-
T
J
= 150
°
C, V
GE
= 15V, R
G
= 3
L = 100
μ
H, V
CE
= 600V
IGBT and Diode at T
J
= 25
°
C,
I
CE
= 20A,
V
CE
= 390V,
V
GE
= 15V,
R
G
= 3
L = 200
μ
H
Test Circuit - Figure 26
100
-
-
A
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 2)
Turn-On Energy (Note 2)
Turn-Off Energy (Note 3)
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 2)
Turn-On Energy (Note 2)
Turn-Off Energy (Note 3)
-
-
-
-
-
-
-
-
-
-
-
-
-
-
8.0
10
35
55
115
200
195
14
18
68
85
115
380
375
-
-
-
-
-
-
ns
ns
ns
ns
μ
J
μ
J
μ
J
ns
ns
ns
ns
μ
J
μ
J
μ
J
260
-
-
85
105
-
450
600
IGBT and Diode at T
J
= 125
°
C
I
CE
= 20A,
V
CE
= 390V,
V
GE
= 15V,
R
G
= 3
L = 200
μ
H
Test Circuit - Figure 26
TO-247
-
-
0.43
°
C/W
NOTE:
Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
is the turn-on loss
of the IGBT only. E
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in figure 26.
Turn-Off Energy Loss (E
) is defined as the integral of the instantaneous power loss starting at the trailing edge of
the input pulse and ending at the point where the collector current equals zero (I
= 0A). All devices were tested per
JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produc-
es the true total Turn-Off Energy Loss.
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