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參數資料
| 型號： | FH102 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 元件分類： | 運動控制電子 |
| 英文描述： | High-Frequency Low-Noise Amp, Differential Amp Applications |
| 中文描述： | 高頻低噪聲放大器，差分放大器應用 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 66K |
| 代理商： | FH102 |
FH102
Ordering number : EN5874
High-Frequency Low-Noise Amp,
Differential Amp Applications
NPN Epitaxial Planar Silicon Composite Transistor
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
51598TS (KOTO) TA-1130 No.5874-1/5
Package Dimensions
unit: mm
2149-MCP6
[FH102]
1 : Collector1
2 : Emitter1
3 : Collector2
4 : Emitter2
5 : Base2
6 : Base1
SANYO : MCP6
0
‘
0.1
0.65
2.0
1
0
0
2
0.25
1
2
5
4
0.15
0
0
0
3
6
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Symbol
VCBO
VCEO
VEBO
IC
PC
Conditions
Ratings
Unit
V
V
V
mA
mW
20
10
2
70
300
Mounted on ceramic board
(250mm
2
×
0.8mm), 1unit
Mounted on ceramic board
(250mm
2
×
0.8mm)
Total Dissipation
PT
500
mW
Junction Temperature
Storage Temperature
Tj
Tstg
150
°C
°C
–55 to +150
Electrical Characteristics
at Ta=25°C
Parameter
Symbol
Conditions
Ratings
typ
min
max
1.0
10
200
Unit
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain Ratio
Base-to-Emitter Voltage
Difference
Gain-Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance Cre
ICBO
IEBO
hFE
hFE(small/large)
VBE(small-large) VCE=5V, IC=20mA
VCB=10V, IE=0
VEB=1V, IC=0
VCE=5V, IC=20mA
VCE=5V, IC=20mA
μA
μA
90
0.7
0.95
1.0
mV
fT
Cob
VCE=5V, IC=20mA
VCB=10V, f=1MHz
VCB=10V, f=1MHz
5
7
GHz
pF
pF
0.75
0.5
Continued on next page.
1.2
Features
Composite type with 2 transistors contained in the MCP
package currently in use, improving the mounting
efficiency greatly.
The FH102 is formed with two chips, being equivalent to
the 2SC5226, placed in one package.
Optimal for differential amplification due to excellent
thermal equilibrium and pair capability.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FH102A | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:NPN Epitaxial Planar Silicon Composite Transistor High-Frequency Low-Noise Amplifier, Differential Amplifier Applications |
| FH102A-TR-E | 功能描述:兩極晶體管 - BJT PCH+PCH 4V DRIVE SERIES RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FH103 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:High-Frequency Low-Noise Amplifier, Differential Amplifier Applications |
| FH104 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:High-Frequency Low-Noise Amplifier, Differential Amplifier Applications |
| FH1040 | 制造商:Datak Corporation 功能描述:Fuse Holder |
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