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參數(shù)資料
| 型號(hào)： | FH1100 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | SILICON DIODE |
| 中文描述： | SILICON, MIXER DIODE, DO-7 |
| 封裝： | HERMETIC SEALED, GLASS PACKAGE-2 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 17K |
| 代理商： | FH1100 |
A D V A N C E D S E M I C O N D U C T O R, I N C
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 °C
SYMBOL
V
F
I
F
= 10 mA
I
R
V
R
= 1.0 V
V
BR
I
R
= 100
μ
A
TEST CONDITIONS
MINIMUM
TYPICAL MAXIMUM
UNITS
mV
550
1.0
μA
5.0
V
C
T0
V
R
= 0 V f = 1.0 MHz
1.0
pF
NF
f = 890 MHz
10
dB
Q
S
I
F
= 10 mA
1.6
pC
SILICON DIODE
FH1100
DESCRIPTION:
The
ASI FH1100
is a Silicon Diffused
Hot Carrier Diode.
FEATURES INCLUDE:
Q
S
= 1.6 pC Typ.
C = 1.0 pF Max. @ f = 890 MHz
Hermetic Glass Package
MAXIMUM RATINGS
I
F
10 mA
V
R
5.0 V
P
DISS
100 mW @ T
C
= 25 °C
-65 °C to +125
°C
-65 °C to +150
°C
T
J
T
STG
T
soldering
+260 °C for 5 Seconds
PACKAGE STYLE DO-7
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