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參數資料
型號: FHF1
廠商: Electronic Theatre Controls, Inc.
英文描述: High Dynamic Range FET
中文描述: 高動態范圍場效應管
文件頁數: 1/4頁
文件大小: 82K
代理商: FHF1
WJ Communications, Inc.
Phone: 1-800-WJ1-4401 FAX: 408-577-6620 e-mail: sales@wj.com Web site: www.wj.com
February 2002
FHF1
High Dynamic Range FET
Product Description
The FHF1 is a high dynamic range FET pack-
aged in a low cost surface mount package. The
combination of low noise figure and high out-
put IP3 at the same bias point makes it ideal for
receiver and transmitter applications. The
FHF1 achieves +39 dBm OIP3 at a mounting
temperature of 85C with an associated MTBF
of >100 years
6
. The package is a SOT-89. All
devices are 100% RF and DC tested.
The product is targeted for applications where
high linearity is required.
Product Features
3000-6000 MHz Bandwidth
+
39 dBm Output IP3
2.4 dB Noise Figure
+
21 dBm P1dB
Single or Dual Supply Operation
MTBF >100 Years
SOT-89 SMT Package
Functional Diagram
4
1
2
3
Function
Gate
Source
Drain
Source
Pin No.
1
2
3
4
Specifications
DC Electrical Parameter
Units
Minimum
Typical
Maximum
Condition
Saturated Drain Current, Idss
Transconductance, Gm
Pinch Off Voltage, Vp
mA
mS
V
100
140
120
-1.5
170
Vgs = 0 V
-3.0
Ids = 0.6 mA
RF Parameter
Units
Minimum
Typical
Maximum
Condition
Small Signal Gain, Gss
Maximum Stable Gain, Gmsg
Third Order Output Intercept, OIP3
1 dB Compression Point, P1dB
Noise Figure, NF
dB
dB
dBm
dBm
dB
10
12
17
+39
+21
2.4
+37
Notes:
1. DC and RF parameters measured under the following conditions unless otherwise noted.
25°C with Vds = 5.0 V, Vgs = 0 V, test frequency = 3000 MHz, 50
system.
2. OIP3 measured with two tones at an output power of 5 dBm/tone separated by 10 MHz.The suppression on the largest IM3 product is used to calculate the OIP3 using a 2:1 slope rule.
3. Degradation of OIP3 occurs at low temperatures. Minimum typical OIP3 at -40°C is +36 dBm.
4. Idss is measured with Vgs = 0 V.
5. Pinch off voltage is measured when Ids = 0.6 mA.
6. MTBF calculated with channel temperature at 155C.
Absolute Maximum Ratings
Parameter
Rating
Drain to Source Voltage
Gate to Source Voltage
Gate Current
Storage Temperature
RF Input Power (continuous)
8.0 V
-6.0 V
4.5 mA
-55 to +125°C
+10 dBm
Operation of this device above any of these parameters may cause permanent damage.
Ordering Information
Part No.
Description
FHF1
High Dynamic Range FET
(Available in tape and reel)
The Communications Edge
Advanced Product Information
Actual Size
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