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參數資料
| 型號： | FHX35LG |
| 廠商： | FUJITSU LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Low Noise HEMT |
| 中文描述： | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | HERMETIC SEALED, METAL CERAMIC, CASE LG, 4 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 155K |
| 代理商： | FHX35LG |
Item
Conditions
Drain Current
Transconductance
Gate-Source Leakage Current
Gate-Drain Capacitance
Symbol
IDSS
IGSO
CGD
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25
°
C)
mA
nA
mS
pF
Unit
gm
Pinch-off Voltage
Vp
V
Gate-Source Capacitance
pF
CGS
Limits
Min.
85
20
-
Max.
15
-2.0
-0.2
45
-
-
FHX35X/002
FHX35LG/002
-
-
-
Min.
40
-1.0
60
0.27
-
-
0.47
10
0.035
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Symbol
Tstg
VDS
6
-5
290
-65 to 175
mW
°
C
°
C
V
V
VGS
PT
Channel Temperature
+175
Tch
Rth
Thermal Resistance
150
Channel to Case
°
C/W
Ratings
Conditions
Unit
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25
°
C)
VGS=-2V
VDS=3V
IDS=10mA
VDS=3V, IDS=10mA
VDS=2V, VGS=0V
VDS=2V, IDS=10mA
VDS=2V, IDS=1mA
DESCRIPTION
The FHX35X/002 Chip and FHX35LG/002 packaged devices are HEMT
(High Electron Mobility Transistor) ones suitable for use as the front end
of an optical receiver in high speed lightwave communication systems.
This HEMT combines high transconductance, low gate capacitance and
low leakage current; all important factors in achieving low noise
preamplification. Fujitsu’s stringent Quality Assurance criteria and
detailed Test Procedures assure Highest Reliabiltity Performance.
FEATURES
High Transconductance
Low Leakage Current
Low Gate Capacitance
Gold Bonding System
Proven Reliability
1
Edition 1.1
May 1998
FHX35X/002
FHX35LG/002
Low Noise HEMT
LG PACKAGE
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FHX35LG/002 | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:Low Noise HEMT |
| FHX35X | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:GaAs HEMTs, Chip, Low Noise Amp, DBS LNB, 1.2dB, 12GHz, Waffle5 |
| FHX35X/002 | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:Low Noise HEMT |
| FHX45X | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:GaAs HEMTs, Chip, Low Noise Amp, DBS LNB, 0.55dB,12GHz, Waffle5 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:GaAs HEMTs, Chip, Low Noise Amp, DBS LNB, 0.55dB,12GHz, Waffle4 |
| FHX76LP | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:GaAs HEMTs, BS/CS LNA, 0.4dB, 12GHz, Bulk |
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