欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: FJA13009
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 功率晶體管
英文描述: High Voltage Switch Mode Applications
中文描述: 12 A, 400 V, NPN, Si, POWER TRANSISTOR
封裝: TO-3P, 3 PIN
文件頁數: 1/5頁
文件大?。?/td> 51K
代理商: FJA13009
2003 Fairchild Semiconductor Corporation
Rev. A, May 2003
F
NPN Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C
unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current (DC)
I
CP
Collector Current (Pulse)
I
B
Base Current
P
C
Collector Dissipation (T
C
=25
°
C)
T
J
Junction Temperature
T
STG
Storage Temperature
Electrical Characteristics
T
C
=25
°
C
unless otherwise noted
Symbol
Parameter
V
CEO
(sus)
Collector-Emitter Sustaining Voltage
I
EBO
Emitter Cut-off Current
h
FE
DC Current Gain
* Pulse test: PW
300
μ
s, Duty cycle
2% Pulse
Parameter
Value
700
400
9
12
24
6
130
150
- 65 ~ 150
Units
V
V
V
A
A
A
W
°
C
°
C
Test Condition
I
C
= 10mA, I
B
= 0
V
EB
= 7V, I
C
= 0
V
CE
= 5V, I
C
= 5A
V
CE
= 5V, I
C
= 8A
I
C
= 5A, I
B
= 1A
I
C
= 8A, I
B
= 1.6A
I
C
= 12A, I
B
= 3A
I
C
= 5A, I
B
= 1A
I
C
= 8A, I
B
= 1.6A
V
CB
= 10V , f = 0.1MHz
V
CE
= 10V, I
C
= 0.5A
V
CC
=125V, I
C
= 8A
I
B1
= - I
B2
= 1.6A
R
L
= 15,6
Min.
400
Typ.
Max.
Units
V
mA
1
40
30
1
1.5
3
1.2
1.6
8
6
V
CE
(sat)
Collector-Emitter Saturation Voltage
V
V
V
V
V
pF
MHz
μ
s
μ
s
μ
s
V
BE
(sat)
Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn On Time
Storage Time
Fall Time
C
ob
f
T
t
ON
t
STG
t
F
180
4
1.1
3
0.7
FJA13009
High Voltage Switch Mode Applications
High Speed Switching
Suitable for Switching Regulator and Motor Control
TO-3P
1
1.Base 2.Collector 3.Emitter
相關PDF資料
PDF描述
FJA3835 Power Amplifier
FJA4210 PNP Epitaxial Silicon Transistor
FJA4213 Audio Power Amplifier
FJA4310 NPN Epitaxial Silicon Transistor
FJA4313 Audio Power Amplifier
相關代理商/技術參數
參數描述
FJA13009TU 功能描述:兩極晶體管 - BJT NPN Sil Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
FJA160303 制造商:Schneider Electric 功能描述:MINIATURE CIRCUIT BREAKER 347V 30A
FJA160305 制造商:Schneider Electric 功能描述:MINIATURE CIRCUIT BREAKER 347V 30A
FJA3835 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Power Amplifier
FJA3835TU 功能描述:兩極晶體管 - BJT NPN Silicon RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
主站蜘蛛池模板: 额济纳旗| 信丰县| 新民市| 吉林市| 义马市| 开远市| 珠海市| 长葛市| 莱芜市| 阿拉善右旗| 保定市| 黄大仙区| 宁南县| 寿宁县| 芦山县| 凤阳县| 濮阳县| 高阳县| 桂阳县| 阳朔县| 新宾| 东安县| 公安县| 叙永县| 思茅市| 鸡东县| 井研县| 江安县| 宁都县| 宝兴县| 靖远县| 霍州市| 古交市| 红桥区| 石泉县| 临沧市| 苏尼特左旗| 宜黄县| 连平县| 太原市| 淮阳县|