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參數資料
| 型號： | FJAF4210 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GT; Connector Shell Size:10SL; Connecting Termination:Solder; Circular Shell Style:Box Mount Receptacle; Body Style:Straight; Circular Contact Gender:Socket |
| 中文描述： | 10 A, 140 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | TO-3PF, 3 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 88K |
| 代理商： | FJAF4210 |
2002 Fairchild Semiconductor Corporation
Rev. A, November 2002
F
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C
unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current (DC)
I
B
Base Current (DC)
P
C
Collector Dissipation (T
C
=25
°
C)
R
θ
JC
Junction to Case
T
J
Junction Temperature
T
STG
Storage Temperature
Electrical Characteristics
T
C
=25
°
C
unless otherwise noted
Symbol
Parameter
BV
CBO
Collector-Base Breakdown Voltage
BV
CEO
Collector-Emitter Breakdown Voltage
BV
EBO
Emitter-Base Breakdown Voltage
I
CBO
Collector Cut-off Current
I
EBO
Emitter Cut-off Current
h
FE
V
CE
(sat)
Collector-Emitter Saturation Voltage
C
ob
Output Capacitance
f
T
* Pulse Test : PW=20
μ
s
h
FE
Classification
Classification
h
FE
Parameter
Value
-200
-140
-6
-10
-1.5
80
1.33
150
- 55 ~ 150
Units
V
V
V
A
A
W
°
C/W
°
C
°
C
Test Condition
I
C
=-5mA, I
E
=0
I
C
=-50mA, R
BE
=
∞
I
E
=-5mA, I
C
=0
V
CB
=-200V, I
E
=0
V
EB
=-6V, I
C
=0
V
CE
=-4V, I
C
=-3A
I
C
=-5A, I
B
=-0.5A
V
CB
=-10V, f=1MHz
V
CE
=-5V, I
C
=-1A
Min.
-200
-140
-6
Typ.
Max.
Units
V
V
V
μ
A
μ
A
-10
-10
180
-0.5
*
DC Current Gain
50
V
pF
MHz
400
30
Current Gain Bandwidth Product
R
O
Y
50 ~ 100
70 ~ 140
90 ~ 180
FJAF4210
Audio Power Amplifier
High Current Capability : I
C
= -10A
High Power Dissipation
Wide S.O.A
Complement to FJAF4310
TO-3PF
1.Base 2.Collector 3.Emitter
1
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| FJAF4210O | BJT |
| FJAF4210R | BJT |
| FJAF4210Y | BJT |
| FJAF4310 | NPN Epitaxial Silicon Transistor |
| FJAF4310O | NPN Epitaxial Silicon Transistor |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FJAF42100TU | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FJAF4210O | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:BJT |
| FJAF4210OTU | 功能描述:兩極晶體管 - BJT PNP Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FJAF4210R | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:BJT |
| FJAF4210RTU | 功能描述:兩極晶體管 - BJT PNP Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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