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參數資料
| 型號： | FJAF6810D |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | GT 4C 2#16 2#12 PIN RECP BOX |
| 中文描述： | 10 A, 750 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | TO-3PF, 3 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 77K |
| 代理商： | FJAF6810D |
2001 Fairchild Semiconductor Corporation
Rev. B, August 2001
F
TO-3PF
1
1.Base 2.Collector 3.Emitter
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current (DC)
I
CP
*
Collector Current (Pulse)
P
C
Collector Dissipation
T
J
Junction Temperature
T
STG
Storage Temperature
* Pulse Test: Pulse Width=5ms, Duty Cycle < 10%
Electrical Characteristics
T
C
=25
°
C
unless otherwise noted
Symbol
Parameter
I
CES
Collector Cut-off Current
I
CBO
Collector Cut-off Current
I
EBO
Emitter Cut-off Current
BV
EBO
Base-Emitter Breakdown Voltage
h
FE1
h
FE2
V
CE
(sat)
Collector-Emitter Saturation Voltage
V
BE
(sat)
Base-Emitter Saturation Voltage
V
F
Damper Diode Turn On Voltage
t
STG
*
Storage Time
t
F
*
Fall Time
* Pulse Test: PW=20
μ
s, duty Cycle=1% Pulsed
Thermal Characteristics
T
C
=25
°
C
unless otherwise noted
Symbol
R
θ
jC
Thermal Resistance, Junction to Case
Parameter
Rating
1500
750
6
10
20
60
150
-55 ~ 150
Units
V
V
V
A
A
W
°
C
°
C
Test Conditions
V
CB
=1500V, R
BE
=0
V
CB
=800V, I
E
=0
V
EB
=4V, I
C
=0
I
E
=300mA, I
C
=0
V
CE
=5V, I
C
=1A
V
CE
=5V, I
C
=6A
I
C
=6A, I
B
=1.5A
I
C
=6A, I
B
=1.5A
I
F
= 6A
V
CC
=200V, I
C
=6A, R
L
=33
I
B1
=1.2A, I
B2
= - 2.4A
Min
Typ
Max
1
10
250
Units
mA
μ
A
mA
V
40
6
7
5
DC Current Gain
8
3
V
V
V
μ
s
μ
s
1.5
2
3
0.2
Parameter
Typ
Max
2.08
Units
°
C/W
FJAF6810D
High Voltage Color Display Horizontal
Deflection Output (Damper Diode Built-In)
High Collector-Base Breakdown Voltage : BV
CBO
= 1500V
High Switching Speed : t
F
(typ.) =0.1
μ
s
For Color TV
C
B
E
35
typ.
Equivalent Circuit
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