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參數資料
| 型號： | FJX3906 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | General Purpose Transistor |
| 中文描述： | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SOT-323, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 41K |
| 代理商： | FJX3906 |
2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
F
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25
°
C unless otherwise noted
Electrical Characteristics
T
a
=25
°
C
unless otherwise noted
*
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%
Symbol
Parameter
Value
-40
-40
-5
-200
350
-55 ~ 150
Units
V
V
V
mA
mW
°
C
V
CBO
V
CES
V
EBO
I
C
P
C
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CEX
h
FE
Parameter
Test Condition
Min.
-40
-40
-5
Max.
Units
V
V
V
nA
Collector-Base Breakdown Voltage
* Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
* DC Current Gain
I
C
= -10
μ
A, I
E
=0
I
C
= -1.0mA, I
B
=0
I
E
=10
μ
A, I
C
=0
V
CE
= -30V, V
EB
= -3V
V
CE
= -1V, I
C
= -0.1mA
V
CE
= -1V, I
C
= -1mA
V
CE
= -1V, I
C
= -10mA
V
CE
= -1V, I
C
= -50mA
V
CE
= -1V, I
C
= -100mA
I
C
= -10mA, I
B
= -1mA
I
C
= -50mA, I
B
= -5mA
I
C
= -10mA, I
B
= -1mA
I
C
= -50mA, I
B
= -5mA
I
C
= -10mA, V
CE
= -20V
V
CB
= -5V, I
E
=0
f=1.0MHz
I
C
= -10
μ
A, V
CE
= -5V
R
S
=1K
f=10Hz to 15.7KHz
V
CC
= -3V, V
BE
= -0.5V
I
C
= -10mA, I
B1
= -1mA
V
CC
= -3V, I
C
= -10mA
I
B1
=I
B2
=1mA
-50
60
80
100
60
30
300
V
CE
(sat)
* Collector-Emitter Saturation Voltage
-0.25
-0.4
-0.85
-0.95
V
V
V
V
V
BE
(sat)
* Base-Emitter Saturation Voltage
-0.65
f
T
C
ob
Current Gain Bandwidth Product
Output Capacitance
250
MHz
pF
4.5
NF
Noise Figure
4
dB
t
ON
Turn On Time
70
ns
t
OFF
Turn Off Time
300
ns
FJX3906
General Purpose Transistor
S2A
Marking
1. Base 2. Emitter 3. Collector
1
2
SOT-323
3
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相關代理商/技術參數 |
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| FJX3906TF | 功能描述:兩極晶體管 - BJT PNP/40V/0.2A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FJX3906TF_Q | 功能描述:兩極晶體管 - BJT PNP/40V/0.2A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FJX4001R | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Switching Application |
| FJX4001RTF | 功能描述:開關晶體管 - 偏壓電阻器 PNP Si Transistor Epitaxial RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發射極最大電壓 VCEO:50 V 集電極連續電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| FJX4001RTF_Q | 功能描述:開關晶體管 - 偏壓電阻器 PNP Si Transistor Epitaxial RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發射極最大電壓 VCEO:50 V 集電極連續電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
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