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參數資料
| 型號： | FK16VS-6 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | HIGH-SPEED SWITCHING USE |
| 中文描述： | 高速開關使用 |
| 文件頁數： | 2/5頁 |
| 文件大小： | 51K |
| 代理商： | FK16VS-6 |
Feb.1999
—
—
—
—
3
0.31
2.48
10.0
1050
220
45
20
40
110
50
1.5
—
—
300
±
30
—
—
2
—
—
6.5
—
—
—
—
—
—
—
—
—
—
I
D
= 1mA, V
GS
= 0V
I
G
=
±
100
μ
A, V
DS
= 0V
V
GS
=
±
25V, V
DS
= 0V
V
DS
= 300V, V
GS
= 0V
I
D
= 1mA, V
DS
= 10V
I
D
= 8A, V
GS
= 10V
I
D
= 8A, V
GS
= 10V
I
D
= 8A, V
DS
= 10V
V
DS
= 25V, V
GS
= 0V, f = 1MHz
V
DD
= 150V, I
D
= 8A, V
GS
= 10V, R
GEN
= R
GS
= 50
I
S
= 8A, V
GS
= 0V
Channel to case
I
S
= 16A, d
is
/d
t
= –100A/
μ
s
V
(BR) DSS
V
(BR) GSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-c)
t
rr
MITSUBISHI Nch POWER MOSFET
FK16VS-6
HIGH-SPEED SWITCHING USE
V
V
μ
A
mA
V
V
S
pF
pF
pF
ns
ns
ns
ns
V
°
C/W
ns
—
—
±
10
1
4
0.41
3.28
—
—
—
—
—
—
—
—
2.0
1.00
150
200
160
120
80
40
0
200
150
100
50
0
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
2 3 5 710
1
10
0
2 3 5 710
2
2 3 5 710
3
T
C
= 25°C
Single Pulse
tw=10μs
100μs
1ms
10ms
DC
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE T
C
(°C)
P
D
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE V
DS
(V)
D
D
ELECTRICAL CHARACTERISTICS
(Tch = 25
°
C)
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol
Unit
Parameter
Test conditions
Limits
Typ.
Min.
Max.
PERFORMANCE CURVES
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