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參數資料
| 型號： | FKN1N60SA |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 晶閘管 |
| 英文描述： | TRIAC (Silicon Bidirectional Thyristor) |
| 中文描述： | 600 V, 1 A, TRIAC, TO-92 |
| 封裝： | TO-92, 3 PIN |
| 文件頁數： | 2/7頁 |
| 文件大小： | 259K |
| 代理商： | FKN1N60SA |
2
www.fairchildsemi.com
FKN1N60SA Rev. A
F
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Commutation dv/dt test
Symbol
I
DRM
I
RRM
V
TM
Parameter
Test Condition
Min.
-
Typ.
-
Max.
100
Units
μ
A
Repetieive Peak Off-State Current
V
DRM
/V
RRM
applied
On-State Voltage
T
C
=25
°
C, I
TM
=1.12A
Instantaneous measurement
-
-
1.8
V
V
GT
Gate Trigger Voltage
I
II
III
I
II
III
V
D
=12V, R
L
=100
T2(+), Gate (+)
T2(+), Gate (-)
T2(-), Gate (-)
T2(+), Gate (+)
T2(+), Gate (-)
T2(-), Gate (-)
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2.0
2.0
2.0
5
5
5
-
15
15
20
-
V
V
V
I
GT
Gate Trigger Current
V
D
=12V, R
L
=100
mA
mA
mA
V
mA
mA
mA
V/
μ
s
V
GD
I
H
I
L
Gate Non-Trigger Voltage
Holding Current (I, II,III)
Latching Current
T
J
=125
°
C, V
D
=1/2V
DRM
V
D
= 12V, I
TM
= 200mA
V
D
= 12V, I
G
= 10mA
0.2
-
-
-
20
I, III
II
dv/dt(s)
Critical Rate of Rise of
Off-State Voltag
Critical-Rate of Rise of Off-State Com-
mutating Voltage (di/dt=-0.7A/uS)
V
DRM
= 63% Rated, T
j
= 125
°
C,
Exponential Rise
dv/dt(c)
3.0
-
-
V/
μ
s
Device
Test Condition
Commutating voltage and current waveforms
(inductive load)
FKN1N60SA
1. Junction Temperature
T
J
=125
°
C
2. Rate of decay of on-state
commutating current (di/dt)
C
3. Peak off-state voltage
V
D
= 300V
Supply Voltage
Main Current
Main Voltage
Time
Time
Time
V
D
(dv/dt)
C
(di/dt)
C
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