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參數資料
| 型號： | FKPF12N80 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 晶閘管 |
| 英文描述： | Application Explanation |
| 中文描述： | 800 V, 12 A, TRIAC, TO-220AB |
| 封裝： | LEAD FREE, TO-220F, 3 PIN |
| 文件頁數： | 2/7頁 |
| 文件大?。?/td> | 170K |
| 代理商： | FKPF12N80 |
2004 Fairchild Semiconductor Corporation
Rev. D2, April 2004
F
Electrical Characteristics
T
C
=25
°
C unless otherwise noted
Notes:
1. Gate Open
2. Measurement using the gate trigger characteristics measurement circuit
3. The critical-rate of rise of the off-state commutating voltage is shown in the table below
4. The contact thermal resistance R
TH(c-f)
in case of greasing is 0.5
°
C/W
Quadrant Definitions for a Triac
Symbol
I
DRM
V
TM
Parameter
Test Condition
Min.
-
-
Typ.
-
-
Max.
20
1.5
Units
μ
A
V
Repetieive Peak Off-State Current
On-State Voltage
V
DRM
applied
T
C
=25
°
C, I
TM
=17A
Instantaneous measurement
V
GT
Gate Trigger Voltage
(Note 2)
I
V
D
=12V, R
L
=20
T2(+), Gate (+)
T2(+), Gate (-)
T2(-), Gate (-)
T2(+), Gate (+)
T2(+), Gate (-)
T2(-), Gate (-)
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.5
1.5
1.5
30
30
30
-
50
50
70
-
V
V
V
II
III
I
II
III
I
GT
Gate Trigger Current
(Note 2)
V
D
=12V, R
L
=20
mA
mA
mA
V
mA
mA
mA
V/
μ
s
V
GD
I
H
I
L
Gate Non-Trigger Voltage
Holding Current
Latching Current
T
J
=125
°
C, V
D
=1/2V
DRM
V
D
= 12V, I
TM
= 1A
V
D
= 12V, I
G
= 1.2I
GT
0.2
-
-
-
-
I, III
II
dv/dt
Critical Rate of Rise of
Off-State Voltag
Critical-Rate of Rise of Off-State
Commutating Voltage
(Note 3)
V
DRM
= Rated, T
j
= 125
°
C,
Exponential Rise
300
(dv/dt)
C
10
-
-
V/
μ
s
V
DRM
(V)
Test Condition
Commutating voltage and current waveforms
(inductive load)
FKPF12N80
1. Junction Temperature
T
J
=125
°
C
2. Rate of decay of on-state
commutating current
(di/dt)
C
= - 6.5A/ms
3. Peak off-state voltage
V
D
= 400V
Supply Voltage
Main Current
Main Voltage
Time
Time
Time
V
D
(dv/dt)
C
(di/dt)
C
T2 Positive
+
-
T2 Negative
Quadrant II
Quadrant I
Quadrant III
Quadrant IV
I
GT
-
+ I
GT
(+) T2
(+) I
GT
GATE
T1
(+) T2
(+) I
GT
GATE
T1
(+) T2
(+) I
GT
GATE
T1
(+) T2
(+) I
GT
GATE
T1
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FKPF12N80 | 制造商:Fairchild Semiconductor Corporation 功能描述:Triac |
| FKPF12N80YDTU | 功能描述:雙向可控硅 Bi-Di Triode Thyristor Planar Sil RoHS:否 制造商:STMicroelectronics 開啟狀態 RMS 電流 (It RMS):16 A 不重復通態電流:120 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態電壓: 保持電流（Ih 最大值）:45 mA 柵觸發電壓 (Vgt):1.3 V 柵觸發電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB |
| FKPF2N80 | 功能描述:雙向可控硅 Bi-Dir Triode Thyristor Planar RoHS:否 制造商:STMicroelectronics 開啟狀態 RMS 電流 (It RMS):16 A 不重復通態電流:120 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態電壓: 保持電流（Ih 最大值）:45 mA 柵觸發電壓 (Vgt):1.3 V 柵觸發電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB |
| FKPF3N80 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Bi-Directional Triode Thyristor Planar Silicon |
| FKPF3N80TU | 功能描述:雙向可控硅 NPNP 00V/2A RoHS:否 制造商:STMicroelectronics 開啟狀態 RMS 電流 (It RMS):16 A 不重復通態電流:120 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態電壓: 保持電流（Ih 最大值）:45 mA 柵觸發電壓 (Vgt):1.3 V 柵觸發電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB |
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