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參數資料
| 型號： | FL10KM-12 |
| 廠商： | Powerex Power Semiconductors |
| 英文描述： | Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
| 中文描述： | N溝道功率MOSFET高速開關使用 |
| 文件頁數： | 4/4頁 |
| 文件大小： | 47K |
| 代理商： | FL10KM-12 |
PRELIMINARY
Some parametric limits are subject to change.
Sep.1998
MITSUBISHI Nch POWER MOSFET
FL10KM-12A
HIGH-SPEED SWITCHING USE
0
4
8
12
16
20
0
20
40
60
80
100
400V
T
C
h = 25°C
I
D
= 10A
200V
V
DS
= 100V
0.4
0.6
0.8
1.0
1.2
1.4
–50
0
50
100
150
V
GS
= 0V
I
D
= 1mA
1.0
0
2.0
3.0
4.0
5.0
–50
0
50
100
150
V
DS
= 10V
I
D
= 1mA
0
8
16
24
32
40
0
0.8
1.6
2.4
3.2
4.0
T
C
= 125°C
75°C
25°C
V
GS
= 0V
Pulse Test
10
–1
10
0
2
3
5
7
10
1
2
3
5
7
–50
0
50
100
150
V
GS
= 10V
I
D
= 5A
Pulse Test
10
–2
10
–1
2
3
5
7
10
0
2
3
5
7
10
1
2
3
5
7
10
–4
2 3 57
2 3 57
2 3 57
2 3 57
10
0
2 3 57
10
1
2 3 57
10
2
10
–3
10
–2
10
–1
D = 1.0
0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
P
DM
tw
D
=
T
tw
T
GATE-SOURCE VOLTAGE
VS. GATE CHARGE
(TYPICAL)
GATE CHARGE Q
g
(nC)
G
G
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
SOURCE-DRAIN VOLTAGE V
SD
(V)
S
S
CHANNEL TEMPERATURE Tch (°C)
D
D
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
G
V
G
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
PULSE WIDTH t
w
(s)
T
t
(
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
D
D
CHANNEL TEMPERATURE Tch (°C)
D
(
D
(
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相關代理商/技術參數 |
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| FL10KM12A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 10A I(D) | TO-220FN |
| FL10KM-12A | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
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