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參數資料
| 型號： | FLL200IB-3 |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | L-Band Medium & High Power GaAs FET |
| 中文描述： | L波段中等 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 116K |
| 代理商： | FLL200IB-3 |
1
Edition 1.1
July 1999
FLL200IB-1, FLL200IB-2, FLL200IB-3
L-Band Medium & High Power GaAs FET
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
15
-5
83.3
-65 to +175
175
Tc = 25
°
C
V
V
W
°
C
°
C
PT
Tstg
Tch
Condition
Unit
Rating
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25
°
C)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 53.6 and -11.6 mA respectively with
gate resistance of 25
.
3.The operating channel temperature (Tch) should not exceed 145
°
C.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25
°
C)
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Drain Current
Output Power
at 1dB G.C.P.
Power Gain
at 1dB G.C.P.
Symbol
IDSS
gm
Vp
VGSO
-
-
8
12
-
-3.5
-
4000
-2.0
-
-1.0
-5
10.0
10.0
11.0
11.0
-
-
-
4.8
6.0
41.5
42.5
-
VDS = 5V, IDS = 480mA
IGS = -480
μ
A
VDS = 5V, IDS = 4800mA
VDS = 5V, VGS = 0V
VDS = 10V
IDS
=
0.6 IDSS
(Typ.)
VDS = 10V
IDS
=
0.6 IDSS (Typ.)
A
mS
V
dB
dB
A
12.0
13.0
-
dB
dBm
V
P1dB
FLL200IB-1
FLL200IB-2
FLL200IB-3
FLL200IB-1
FLL200IB-2
FLL200IB-3
G1dB
Idsr
Power added Efficiency
Thermal Resistance
Channel Temperature Rise
CASE STYLE:
IB
-
34
-
%
Rth
Tch
Test Conditions
Unit
Limit
Typ.
Max.
Min.
-
-
1.6
-
1.8
80
Channel to Case
10V x Idsr x Rth
°
C/W
°
C
η
add
G.C.P.: Gain Compression Point
f=1.5GHz
f=2.3GHz
f=2.6GHz
f=1.5GHz
f=2.3GHz
f=2.6GHz
FEATURES
High Output Power: P1dB = 42.5dBm (Typ.)
High Gain: G1dB = 13.0dB (Typ.)@1.8GHz (FLL200IB-1)
High PAE:
η
add = 34% (Typ.)
Proven Reliability
Hermetically Sealed Package
DESCRIPTION
The FLL200IB-1, FLL200IB-2, FLL200IB-3 are Power GaAs FETs that
are specifically designed to provide high power at L-Band frequencies
with gain, linearity and efficiency superior to that of silicon devices.
The performance in multitone environments for Class AB operation make
them ideally suited for base station applications.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
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