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參數資料
| 型號： | FLL400IP-3 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | L-Band Medium & High Power GaAs FET |
| 中文描述： | L波段中等 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 233K |
| 代理商： | FLL400IP-3 |
1
Edition 1.5
October 2004
FLL400IP-3
L-Band Medium & High Power GaAs FET
FEATURES
Push-Pull Configuration
High Power Output: 35W (Typ.)
High PAE: 43% (Typ.)
Broad Frequency Range: 2300 to 2500 MHz.
Suitable for class A operation at 10V
and class AB operation at 12V
DESCRIPTION
The FLL400IP-3 is a 35 Watt GaAs FET that employs a push-pull design that
offers ease of matching, greater consistency and a broader bandwidth for high
power S-band amplifiers.This product is targeted to reduce the size and
complexity of highly linear, high power base station transmitting amplifiers.
This new product is uniquely suited for use in Wireless Local Loop (WLL) base
station amplifiers as it offers high gain, long term reliability and ease of use.
Parameter
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
PT
Tstg
Tc = 25
°
C
V
V
W
°
C
°
C
Tch
Condition
107
-65 to +175
+175
-5
15
Rating
Unit
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25
°
C)
Eudyna recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 12 volts.
2. The forward and reverse gate currents should not exceed 54.4 and -17.4 mA respectively with
gate resistance of 25
.
3. The operating channel temperature (Tch) should not exceed 145
°
C.
Item
Drain Current
Transconductance
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Power-Added Efficiency
Thermal Resistance
Symbol
I
DSS
V
GSO
-
6000
-
-
12
16
-1.0
-2.0
-3.5
-5
-
-
-
43
-
-
1.0
1.4
V
DS
= 5V, V
GS
= 0V
V
DS
= 5V, I
DS
= 7.2A
V
DS
= 5V, I
DS
= 720mA
I
GS
= -720
μ
A
Channel to Case
A
mS
V
V
°
C/W
%
gm
V
p
Output Power at 1 dB G.C.P.
Power Gain at 1 dB G.C.P.
44.5
45.5
-
8.0
9.0
-
V
DS
= 12V
f = 2.5 GHz
I
DS
= 2A
dB
dBm
P
1dB
G
1dB
I
DSR
Output Power at 1 dB G.C.P.
Power Gain at 1 dB G.C.P.
-
44.5
-
-
9.0
-
V
DS
= 10V
f = 2.5 GHz
I
DS
= 5A (Note 1)
dB
dBm
P
1dB
G
1dB
R
th
η
add
Drain Current
-
6.0
8.0
A
Conditions
Unit
Limits
Typ.
Max.
Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25
°
C)
G.C.P.: Gain Compression Point
CASE STYLE: IP
Note 1: The device shall be measured at a constant VGS condition.
Eudyna
’
s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
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