- 您現在的位置：買賣IC網 > PDF目錄375831 > FLL600IQ-3 (SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.) L-Band Medium & High Power GaAs FET PDF資料下載
參數資料
| 型號： | FLL600IQ-3 |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | L-Band Medium & High Power GaAs FET |
| 中文描述： | L波段中等 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 102K |
| 代理商： | FLL600IQ-3 |
1
Edition 1.7
December 1999
FLL600IQ-3
L-Band Medium & High Power GaAs FET
DESCRIPTION
The FLL600IQ-3 is a 60 Watt GaAs FET that employs a push-pull design that
offers ease of matching, greater consistency and a broader bandwidth for high
power L-band amplifiers. This product is targeted to reduce the size and complexity
of highly linear, high power base station transmitting amplifiers. This new product is
uniquely suited for use in WLL and MMDS base station amplifiers as it offers high
gain, long term reliability and ease of use.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
FEATURES
Push-Pull Configuration
High Power Output: 60W
High PAE: 43%.
Broad Frequency Range: 2000 to 2700 MHz.
Suitable for class AB operation.
Item
Drain Current
Transconductance
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Output Power at 1 dB G.C.P.
Power Gain at 1 dB G.C.P.
Power-Added Efficiency
Thermal Resistance
CASE STYLE: IQ
Symbol
I
DSS
V
GSO
-
12
-
-
24
32
-1.0
-2.0
-3.5
-5
-
-
47.0
48.0
-
9.0
10.0
-
-
43
-
-
0.8
1.2
V
DS
= 5V, V
GS
= 0V
V
DS
= 5V, I
DS
= 14.4A
V
DS
= 5V, I
DS
= 1.44A
I
GS
= -1.44mA
Channel to Case
V
DS
= 12V
f=2.7 GHz
I
DS
= 4.0A
A
S
V
dB
dBm
V
°
C/W
%
gm
V
p
P
1dB
G
1dB
η
add
Drain Current
-
11.0
15.0
A
I
DSR
R
th
Conditions
Unit
Limits
Typ.
Max.
Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25
°
C)
G.C.P.: Gain Compression Point
Parameter
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
V
DS
V
GS
P
T
T
stg
Tc = 25
°
C
V
V
W
°
C
°
C
T
ch
Condition
125
-65 to +175
+175
-5
15
Rating
Unit
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25
°
C)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 12 volts.
gate resistance of 25
.
3. The operating channel temperature (Tch) should not exceed 145
°
C.
相關PDF資料 |
PDF描述 |
|---|---|
| FLL810IQ-3C | L-Band High Power GaAs FET |
| FLL810IQ-4C | L-Band High Power GaAs FET |
| FLLD261 | HIGH CONDUCTANCE LOW LEAKAGE DIODE |
| FLLD261 | SILICON PLANAR LOW LEAKAGE SERIES DIODE PAIR |
| FLM0910-12F | X-Band Internally Matched FET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FLL800IQ-2C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:L-Band High Power GaAs FET |
| FLL810IQ-3C | 制造商:FUJITSU 功能描述: |
| FLL810IQ-4C | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:L-Band High Power GaAs FET |
| FLLA1 | 制造商:CLULITE 功能描述:FLOOD-A-LITE SPOT LIGHT HEAD |
| FLL-APR-2 | 功能描述:烙鐵 Thick PCB Finger Long (Pack 2) RoHS:否 制造商:Weller 產品:Soldering Stations 類型:Digital, Iron, Stand, Cleaner 瓦特:50 W 最大溫度:+ 850 F 電纜類型:US Cord Included |
發布緊急采購，3分鐘左右您將得到回復。