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參數(shù)資料
| 型號(hào)： | FLM1011-4F |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | X, Ku-Band Internally Matched FET |
| 中文描述： | 十，Ku波段內(nèi)部匹配場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 297K |
| 代理商： | FLM1011-4F |
1
Edition 1.3
August 2004
FLM1011-4F
X, Ku-Band Internally Matched FET
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
15
-5
25.0
-65 to +175
175
Tc = 25
°
C
V
V
W
°
C
°
C
PT
Tstg
Tch
Condition
Unit
Rating
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25
°
C)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 16.0 and -2.2 mA respectively with
gate resistance of 100
.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25
°
C)
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Symbol
IDSS
gm
-
1700
2600
-0.5
-1.5
-3.0
35.5
36.0
-
6.0
7.0
-
VDS = 5V, IDS = 85mA
IGS = -85
μ
A
VDS = 5V, IDS = 1100mA
VDS = 5V, VGS = 0V
VDS = 10V
f = 10.7 ~ 11.7 GHz
IDS
=
0.65 IDSS(Typ.)
ZS = ZL = 50
mA
V
-
1700
-
mS
-5.0
-
-
V
dB
dBm
Vp
VGSO
P1dB
G1dB
Drain Current
-
1100
1300
mA
Idsr
η
add
G
Power-Added Efficiency
-
29
-
%
Gain Flatness
-
-
±
0.6
dB
Thermal Resistance
Channel to Case
-
5.0
6.0
°
C/W
CASE STYLE: IA
Rth
Tch
3rd Order Intermodulation
Distortion
f = 11.7GHz,
f = 10MHz
2-Tone Test
Pout = 25.5dBm S.C.L.
-44
-46
-
dBc
IM3
Test Conditions
Unit
Limit
Typ.
Max.
Min.
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
10V x Idsr x Rth
Channel Temperature Rise
-
-
80
°
C
DESCRIPTION
The FLM1011-4F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
FEATURES
High Output Power: P1dB= 36.0dBm (Typ.)
High Gain: G1dB= 7.0dB (Typ.)
High PAE:
η
add= 29% (Typ.)
Low IM3= -46dBc@Po = 25.5dBm
Broad Band: 10.7 ~ 11.7GHz
Impedance Matched Zin/Zout = 50
Hermetically Sealed
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| FLM1011-6F | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:High Power GaAs FETs, X-Band, 7.5dB, 10.7 11.7GHz, 1650mA, Bulk |
| FLM1011-8F | 制造商:EUDYNA 制造商全稱(chēng):Eudyna Devices Inc 功能描述:X, Ku-Band Internally Matched FET |
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