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參數(shù)資料
| 型號(hào)： | FLM1213-6F |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | X, Ku-Band Internally Matched FET |
| 中文描述： | 十，Ku波段內(nèi)部匹配場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大小： | 295K |
| 代理商： | FLM1213-6F |
2
FLM1213-6F
X, Ku-Band Internally Matched FET
OUTPUT POWER & IM3 vs. INPUT POWER
POWER DERATING CURVE
50
0
100
150
200
Case Temperature (
°
C)
40
30
20
10
T
VDS=10V
f1 = 13.2 GHz
f2 = 13.21 GHz
2-tone test
13
17
15
21
19
23
25
27
Input Power (S.C.L.) (dBm)
S.C.L.: Single Carrier Level
O
-20
-10
-30
-40
-50
25
23
21
27
29
19
I
IM3
Pout
24
22
26
Input Power (dBm)
28
30
32
34
32
30
34
36
38
20
10
30
O
η
a
η
add
Pout
OUTPUT POWER vs. INPUT POWER
VDS = 10V
f = 12.95 GHz
12.7
12.8
12.9
13.0
13.1
13.2
34
32
36
38
40
Frequency (GHz)
O
OUTPUT POWER vs. FREQUENCY
VDS = 10V
P1dB
Pin = 32dBm
28dBm
26dBm
24dBm
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PDF描述 |
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| FLM1314-3F | X, Ku-Band Internally Matched FET |
| FLM1314-6F | X, Ku-Band Internally Matched FET |
| FLM1414-12F | X, Ku-Band Internally Matched FET |
| FLM1414-15F | X,Ku-Band Internally Matched FET |
| FLM3135-18F | C-Band Internally Matched FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FLM1213-8F | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:High Power GaAs FETs, Ku-Band, 6.5dB, 12.7 13.2GHz, 2200mA, Bulk |
| FLM1314-12F | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:X, Ku-Band Internally Matched FET |
| FLM1314-18F | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:High Power GaAs FETs, Ku-Band, 6dB, 13.75 14.5GHz, 5000mA, Bulk |
| FLM1314-3F | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:X, Ku-Band Internally Matched FET |
| FLM1314-6F | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:High Power GaAs FETs, Ku-Band, 5.5dB, 13.75 14.5GHz, 1650mA, Bulk |
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