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參數(shù)資料
| 型號： | FLM1314-6F |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | X, Ku-Band Internally Matched FET |
| 中文描述： | 十，Ku波段內(nèi)部匹配場效應(yīng)管 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 298K |
| 代理商： | FLM1314-6F |
2
FLM1314-6F
X, Ku-Band Internally Matched FET
POWER DERATING CURVE
50
0
100
150
200
Case Temperature (
°
C)
40
30
20
10
T
OUTPUT POWER & IM3 vs. INPUT POWER
VDS=10V
f1 = 14.5 GHz
f2 = 14.51 GHz
2-tone test
18
22
20
26
24
28
Input Power (S.C.L.) (dBm)
S.C.L.: Single Carrier Level
O
-20
-10
-30
-40
-50
30
28
26
32
34
24
I
IM3
Pout
13.9
13.7
14.1
14.3
14.5
34
32
36
38
Frequency (GHz)
O
OUTPUT POWER vs. FREQUENCY
VDS = 10V
P1dB
Pin = 32dBm
30dBm
28dBm
26dBm
24
22
26
28
30
32
34
30
32
36
38
30
15
Input Power (dBm)
O
η
a
η
add
Pout
OUTPUT POWER vs. INPUT POWER
VDS = 10V
f = 1415 GHz
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PDF描述 |
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| FLM1414-12F | X, Ku-Band Internally Matched FET |
| FLM1414-15F | X,Ku-Band Internally Matched FET |
| FLM3135-18F | C-Band Internally Matched FET |
| FLM3439-18F | C-Band Internally Matched FET |
| FLM3439-25F | C-Band Internally Matched FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FLM1314-8F | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:High Power GaAs FETs, Ku-Band, 6dB, 13.75 14.5GHz, 2400mA, Bulk |
| FLM14/10 | 制造商:LITTELFUSE 制造商全稱:Littelfuse 功能描述:Axial Lead and Cartridge Fuses - Midget |
| FLM1414-12F | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:X, Ku-Band Internally Matched FET |
| FLM1414-15F | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:High Power GaAs FETs, Ku-Band, 6dB, 14.0 14.5GHz, 4200mA, Bulk |
| FLM1414-3F | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:High Power GaAs FETs, Ku-Band, 6.5dB, 14.0 14.5GHz, 825mA, Bulk |
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