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參數(shù)資料
| 型號： | FLM1414-12F |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | X, Ku-Band Internally Matched FET |
| 中文描述： | 十，Ku波段內(nèi)部匹配場效應(yīng)管 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 250K |
| 代理商： | FLM1414-12F |
2
FLM1414-12F
X, Ku-Band Internally Matched FET
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
0
2
4
6
8
10
6000
4000
2000
Drain-Source Voltage
D
VGS = 0V
-0.5V
-1.0V
-2.0V
-1.5V
POWER DERATING CURVE
50
0
100
150
200
Case Temperature (
°
C)
60
45
30
15
T
OUTPUT POWER vs. FREQUENCY
14.0
Pin=37dBm
29dBm
33dBm
25dBm
14.1
14.2
14.3 14.4
14.5
Frequency (GHz)
32
34
36
38
40
O
VDS=10V
f = 14.25 GHz
VDS=10V
P1dB
OUTPUT POWER vs. INPUT POWER
25
27
29
31
33
35
37
Input Power (dBm)
32
34
36
38
40
20
10
30
O
η
add
Pout
η
a
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FLM1414-15F | X,Ku-Band Internally Matched FET |
| FLM3135-18F | C-Band Internally Matched FET |
| FLM3439-18F | C-Band Internally Matched FET |
| FLM3439-25F | C-Band Internally Matched FET |
| FLM3439-4F | C-Band Internally Matched FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FLM1414-15F | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:High Power GaAs FETs, Ku-Band, 6dB, 14.0 14.5GHz, 4200mA, Bulk |
| FLM1414-3F | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:High Power GaAs FETs, Ku-Band, 6.5dB, 14.0 14.5GHz, 825mA, Bulk |
| FLM1414-4F | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:Internally Matched Power GaAs FET |
| FLM1414-6F | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:High Power GaAs FETs, Ku-Band, 6.5dB, 14.0 14.5GHz, 1650mA, Bulk |
| FLM1414-8C | 制造商:FUJITSU 功能描述:MESFET Transistor, N-CHAN, SOT-469AVAR |
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