- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377114 > FLM5359-8F (SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.) C-Band Internally Matched FET PDF資料下載
參數(shù)資料
| 型號(hào)： | FLM5359-8F |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | C-Band Internally Matched FET |
| 中文描述： | C波段內(nèi)部匹配場(chǎng)效應(yīng)管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 254K |
| 代理商： | FLM5359-8F |
1
Edition 1.3
August 2004
FLM5359-8F
C-Band Internally Matched FET
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
15
-5
42.8
-65 to +175
175
Tc = 25
°
C
V
V
W
°
C
°
C
PT
Tstg
Tch
Condition
Unit
Rating
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25
°
C)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 32.0 and -4.4 mA respectively with
gate resistance of 100
.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25
°
C)
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power-added Efficiency
3rd Order Intermodulation
Distortion
Power Gain at 1dB G.C.P.
Symbol
IDSS
gm
Vp
VGSO
P1dB
-
-
3900
2000
-2.0
-
5850
-
-1.0
-5.0
-3.5
-
8.5
9.5
-
-
36
-
38.5
39.5
-
VDS = 5V, IDS = 180mA
IGS = -180
μ
A
VDS = 5V, IDS = 2200mA
VDS = 5V, VGS = 0V
VDS =10V,
IDS = 0.55 IDSS (Typ.),
f = 5.3 ~ 5.9 GHz,
ZS=ZL= 50 ohm
f = 5.9 GHz,
f = 10 MHz
2-Tone Test
Pout = 28.5dBm S.C.L.
mA
mS
V
V
dB
%
-44
-46
-
dBc
dBm
G1dB
Idsr
η
add
Drain Current
-
2200
2600
mA
IM3
Gain Flatness
-
-
±
0.6
dB
G
Test Conditions
Unit
Limit
Typ.
Max.
Min.
Channel to Case
Thermal Resistance
-
3.0
3.5
°
C/W
Rth
Tch
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
CASE STYLE:
IB
10V x Idsr x Rth
Channel Temperature Rise
-
-
80
°
C
FEATURES
High Output Power: P1dB= 39.5dBm (Typ.)
High Gain: G1dB= 9.5dB (Typ.)
High PAE:
η
add = 36% (Typ.)
Low IM3= -46dBc@Po = 28.5dBm
Broad Band: 5.3 ~ 5.9GHz
Impedance Matched Zin/Zout = 50
DESCRIPTION
The FLM5359-8F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FLM5972-12F | C-Band Internally Matched FET |
| FLM5972-4F | C-Band Internally Matched FET |
| FLM5972-8F | C-Band Internally Matched FET |
| FLM6472-18F | C-Band Internally Matched FET |
| FLM6472-25F | C-Band Internally Matched FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FLM56/10 | 制造商:LITTELFUSE 制造商全稱:Littelfuse 功能描述:Axial Lead and Cartridge Fuses - Midget |
| FLM5964-12F | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:High Power GaAs FETs, C-Band, 10dB, 5.9 6.4GHz, 3250mA, Bulk |
| FLM5964-12F/001 | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:High Power GaAs FETs, C-Band, 9dB, 5.85 6.75GHz, 3250mA, Bulk |
| FLM5964-18F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:C-Band Internally Matched FET |
| FLM5964-25F | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:High Power GaAs FETs, C-Band, 10dB, 5.9 6.4GHz, 6500mA, Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。