- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄382960 > FLM7785-18F (Electronic Theatre Controls, Inc.) C-Band Internally Matched FET PDF資料下載
參數(shù)資料
| 型號： | FLM7785-18F |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | C-Band Internally Matched FET |
| 中文描述： | C波段內(nèi)部匹配場效應管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 303K |
| 代理商： | FLM7785-18F |
1
Edition 1.2
August 2004
FLM7785-18F
C-Band Internally Matched FET
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
15
-5
83.3
-65 to +175
175
Tc = 25
°
C
V
V
W
°
C
°
C
PT
Tstg
Tch
Condition
Unit
Rating
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25
°
C)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 18.0 and -8.4 mA respectively with
gate resistance of 25
.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25
°
C)
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
Gain Flatness
3rd Order Intermodulation
Distortion
Symbol
IDSS
gm
Vp
VGSO
P1dB
G1dB
Idsr
η
add
G
-
-
8.1
4350
-2.0
-
12.75
-
-3.5
-
-1.0
-5
6.0
-
7.0
4700
-
-
-
29
-
-
41.5
42.5
-
VDS = 5V, IDS = 450mA
IGS = -450
μ
A
VDS = 5V, IDS = 5100mA
VDS = 5V, VGS = 0V
VDS = 10V,
IDS
=
0.55 IDSS (Typ.),
f = 7.7 ~ 8.5 GHz,
ZS=ZL= 50 ohm
f = 8.5 GHz,
f = 10 MHz
2-Tone Test
Pout = 31.5dBm S.C.L.
Channel to Case
10V x Idsr x Rth
A
mS
V
V
dB
mA
%
dB
-42
-45
-
dBc
dBm
5800
IM3
±
0.6
Test Conditions
Unit
Limit
Typ.
Max.
Min.
Thermal Resistance
Channel Temperature Rise
CASE STYLE:
IK
-
-
1.6
-
1.8
80
°
C/W
°
C
Rth
Tch
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
DESCRIPTION
The FLM7785-18F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
FEATURES
High Output Power: P1dB= 42.5dBm (Typ.)
High Gain: G1dB= 7.0dB (Typ.)
High PAE:
η
add= 29% (Typ.)
Low IM3= -45dBc@Po = 31.5dBm
Broad Band: 7.7 ~ 8.5GHz
Impedance Matched Zin/Zout = 50
Hermetically Sealed
相關PDF資料 |
PDF描述 |
|---|---|
| FLM8596-12F | X, Ku-Band Internally Matched FET |
| FLM8596-15F | X-Band Internally Matched FET |
| FLM8596-4F | X, Ku-Band Internally Matched FET |
| FLM8596-8F | X, Ku-Band Internally Matched FET |
| FLT | Product Information Bulletin FLT Low Voltage Tungsten Halogen MR11 Rim Mount Lamp |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FLM7785-45F | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:C-Band Internally Matched FET |
| FLM7785-4F | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:High Power GaAs FETs, C-Band, 8.5dB, 7.7 8.5GHz, 1100mA, Bulk |
| FLM7785-6F | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:C-Band Internally Matched FET |
| FLM7785-8F | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:C-Band Internally Matched FET |
| FLM8 | 制造商:LITTELFUSE 制造商全稱:Littelfuse 功能描述:Axial Lead and Cartridge Fuses - Midget |
發(fā)布緊急采購，3分鐘左右您將得到回復。