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參數資料
| 型號： | FLX207MH-12 |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | X, Ku Band Power GaAs FET |
| 中文描述： | 十，Ku波段砷化鎵場效應管 |
| 文件頁數： | 2/4頁 |
| 文件大?。?/td> | 88K |
| 代理商： | FLX207MH-12 |
2
FLX207MH-12
X, Ku Band Power GaAs FET
-1.5V
POWER DERATING CURVE
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
1000
8
4
12
16
0
50
100
150
200
2
0
4
6
8
10
Case Temperature (
°
C)
Drain-Source Voltage (V)
T
600
200
400
800
D
VGS =0V
-0.5V
-2.0V
-1.0V
OUTPUT POWER vs. INPUT POWER
16 18 20 22 24 26
Input Power (dBm)
32
30
28
26
24
40
20
O
η
add
Pout
η
a
η
a
P1dB &
η
add vs. VDS
f = 12.5 GHz
IDS
≈
0.6 IDSS
8
9
10
Drain-Source Voltage (V)
33
32
31
30
29
20
30
40
10
P
η
add
P1dB
f = 12.5GHz
IDS
≈
0.6 IDSS
VDS=10V
VDS=8.5V
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