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參數(shù)資料
| 型號： | FM120-S |
| 廠商： | 美麗微半導(dǎo)體有限公司 |
| 英文描述： | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| 中文描述： | 肖特基二極管芯片-硅外延式龍門 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 80K |
| 代理商： | FM120-S |
FM120-S THRU FM1100-S
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
For surface mounted applications.
Exceeds environmental standards of ML-S-19500 /
228
Low leakage current.
Mechanical data
Case : Molded plastic, JEDECDO-214AC
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : 0.0015 ounce, 0.05 gram
(V)
(V)
(V)
(V)
(
o
C)
FM120-S
SS12
20
14
20
FM130-S
SS13
30
21
30
FM140-S
SS14
40
28
40
FM150-S
SS15
50
35
50
FM160-S
SS16
60
42
60
FM180-S
SS18
80
56
80
FM1100-S
S110
100
70
100
0.50
0.70
0.85
-55 to +125
-55 to +150
SYMBOLS
MARKING
CODE
Operating
temperature
V
RRM
*1
V
RMS
*2
V
R
*3
V
F
*4
MAXIMUM RATINGS
(AT T
A
=25
o
C unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
Forward rectified current
See Fig.1
I
O
1.0
A
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
I
FSM
30
A
V
R
= V
RRM
T
A
= 25
o
C
0.5
mA
V
R
= V
RRM
T
A
= 125
o
C
10
mA
Thermal resistance
Junction to ambient
R
q
JA
88
o
C / w
Diode junction capacitance
f=1MHz and applied 4vDC reverse voltage
C
J
120
pF
Storage temperature
T
STG
-55
+150
o
C
Reverse current
I
R
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
Chip Schottky Barrier Diodes
Silicon epitaxial planer type
Formosa MS
0.205(5.2)
0.189(4.8)
0.012(0.3) Typ.
0.106(2.7)
0.091(2.3)
0.181(4.6)
0.165(4.2)
0.071(1.8)
0.060(1.5)
0.040 (1.0) Typ.
0.040(1.0) Typ.
Dimensions in inches and (millimeters)
SMA-S
0.055(1.4)
0.063(1.6)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FM130-S | CABLE ASSEM 2MM 50POS SGL END 6,1 |
| FM140-S | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM150-S | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM1100-S | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM160-S | .050 X .050 MICRO STRIPS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FM120W | 制造商:RECTRON 制造商全稱:Rectron Semiconductor 功能描述:SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
| FM120-W | 功能描述:肖特基二極管與整流器 1A 20V Schottky RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| FM120W-W | 功能描述:整流器 1A 20V Schottky RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| FM1216/PM/HM | 制造商:Yageo / Phycomp 功能描述:DESKTOP VIDEO and FM RADIO MODULE SYSTEM B/G |
| FM1216ME/I H-5 | 功能描述:射頻模塊 FM TUNER RoHS:否 制造商:Linx Technologies 產(chǎn)品:Transceiver Modules 頻帶:902 MHz to 928 MHz 輸出功率:- 15.5 dBm to + 12.5 dBm 接口類型:UART 工作電源電壓:- 0.3 VDC to + 5.5 VDC 傳輸供電電流:38.1 mA 接收供電電流:22.7 mA 天線連接器類型:U.FL 最大工作溫度:+ 85 C 尺寸:1.15 mm x 0.63 mm x 0.131 mm |
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