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參數(shù)資料
| 型號(hào)： | FM200TU-07A |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | HIGH POWER SWITCHING USE INSULATED PACKAGE |
| 中文描述： | 大功率開關(guān)使用絕緣包裝 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大小： | 117K |
| 代理商： | FM200TU-07A |
May 2006
MITSUBISHI <MOSFET MODULE>
FM200TU-07A
HIGH POWER SWITCHING USE
INSULATED PACKAGE
0
4
8
12
16
20
0
200
400
600
800
1000
0.5
0.6
0.7
0.8
0.9
1.0
10
1
10
2
2
3
5
7
10
3
2
3
5
7
10
1
10
2
2
3
5
7
10
3
2
3
5
7
10
1
10
2
2
3
5
7
10
3
2
3
5
7
10
1
10
2
2
3
5
7
10
3
2
3
5
7
10
4
2
3
5
7
0
20
60
100
140
40
80
120
10
–2
10
–1
2
3
5
7
10
0
2
3
5
7
10
1
2
3
5
7
0
20
60
100
140
40
80
120
10
–2
10
–1
2
3
5
7
10
0
2
3
5
7
10
1
2
3
5
7
10
1
10
2
2
3
5
7
10
3
2
3
5
7
V
GS
= 0V
T
ch
= 25
°
C
T
ch
= 125
°
C
V
DD
= 24V
V
DD
= 48V
I
D
= 100A
Conditions:
V
DD
= 48V
V
GS
=
±
15V
R
G
= 13
T
ch
= 125
°
C
Inductive load
t
d(off)
Conditions:
V
DD
= 48V
V
GS
=
±
15V
R
G
= 13
T
ch
= 125
°
C
Inductive load
E
sw(off)
E
sw(on)
E
rr
Conditions:
V
DD
= 48V
V
GS
=
±
15V
I
D
= 100A
T
ch
= 125
°
C
Inductive load
E
sw(off)
E
sw(on)
E
rr
t
d(on)
t
r
t
f
Conditions:
V
DD
= 48V
V
GS
=
±
15V
I
D
= 100A
T
ch
= 125
°
C
Inductive load
t
d(off)
t
d(on)
t
f
t
r
GATE CHARGE CHARACTERISTICS
(TYPICAL)
G
G
(
GATE CHARGE Q
G
(nC)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
S
S
(
SOURCE-DRAIN VOLTAGE V
SD
(V)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
S
(
DRAIN CURRENT I
D
(A)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
S
(
GATE RESISTANCE R
G
(
)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
S
(
DRAIN CURRENT I
D
(A)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
S
(
GATE RESISTANCE R
G
(
)
Chip
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FM200TU-2A | HIGH POWER SWITCHING USE INSULATED PACKAGE |
| FM200TU-3A | HIGH POWER SWITCHING USE INSULATED PACKAGE |
| FM20L08 | 1Mbit Bytewide FRAM Memory ? Extended Temp |
| FM20L08-60-TG | 1Mbit Bytewide FRAM Memory ? Extended Temp |
| FM20P5X | Ultra-Low-Power Analog Temperature Sensor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FM200TU-07A_09 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED PACKAGE |
| FM200TU-2A | 功能描述:MOSFET MOD 6PAC HP 100V 100A RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| FM200TU-2A_09 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MOSFET MODULE HIGH POWER SWITCHING USE INSULATED PACKAGE |
| FM200TU-3A | 功能描述:MOSFET MOD 6PAC HP 150V 100A RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| FM200TU-3A_09 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MOSFET MODULE HIGH POWER SWITCHING USE INSULATED PACKAGE |
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