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參數資料
型號: FM200TU-2A
廠商: Mitsubishi Electric Corporation
英文描述: HIGH POWER SWITCHING USE INSULATED PACKAGE
中文描述: 大功率開關使用絕緣包裝
文件頁數: 4/5頁
文件大小: 117K
代理商: FM200TU-2A
May 2006
MITSUBISHI <MOSFET MODULE>
FM200TU-2A
HIGH POWER SWITCHING USE
INSULATED PACKAGE
0
4
8
12
16
20
0
200
400
600
800
1200
1000
0.5
0.6
0.7
0.8
0.9
1.0
10
1
10
2
2
3
5
7
10
3
2
3
5
7
10
1
10
2
2
3
5
7
10
3
2
3
5
7
10
1
10
2
2
3
5
7
10
3
2
3
5
7
10
1
10
2
2
3
5
7
10
3
2
3
5
7
10
4
2
3
5
7
0
10
–2
10
–1
2
3
5
7
10
0
2
3
5
7
10
1
2
3
5
7
10
1
10
2
2
3
5
7
10
3
2
3
5
7
40
80
120
20
60
100
140
0
40
80
120
20
60
100
140
10
–2
10
–1
2
3
5
7
10
0
2
3
5
7
10
1
2
3
5
7
V
GS
= 0V
T
ch
= 25
°
C
T
ch
= 125
°
C
V
DD
= 24V
V
DD
= 48V
I
D
= 100A
Conditions:
V
DD
= 48V
V
GS
=
±
15V
R
G
= 13
T
ch
= 125
°
C
Inductive load
t
d(off)
Conditions:
V
DD
= 48V
V
GS
=
±
15V
R
G
= 13
T
ch
= 125
°
C
Inductive load
E
sw(off)
E
sw(on)
E
rr
Conditions:
V
DD
= 48V
V
GS
=
±
15V
I
D
= 100A
T
ch
= 125
°
C
Inductive load
E
sw(off)
E
sw(on)
E
rr
t
d(on)
t
r
t
f
Conditions:
V
DD
= 48V
V
GS
=
±
15V
I
D
= 100A
T
ch
= 125
°
C
Inductive load
t
d(off)
t
d(on)
t
f
t
r
GATE CHARGE CHARACTERISTICS
(TYPICAL)
G
G
(
GATE CHARGE Q
G
(nC)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
S
S
(
SOURCE-DRAIN VOLTAGE V
SD
(V)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
S
(
DRAIN CURRENT I
D
(A)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
S
(
GATE RESISTANCE R
G
(
)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
S
(
DRAIN CURRENT I
D
(A)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
S
(
GATE RESISTANCE R
G
(
)
Chip
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參數描述
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