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參數資料
| 型號： | FM22L16-55-TG |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 4Mbit FRAM Memory |
| 中文描述： | 的4Mb FRAM存儲器 |
| 文件頁數： | 1/15頁 |
| 文件大?。?/td> | 214K |
| 代理商： | FM22L16-55-TG |
Preliminary
FM22L16
4Mbit FRAM Memory
This is a product that has fixed target specifications but are subject
to change pending characterization results.
Rev. 1.0
Mar. 2007
Ramtron International Corporation
1850 Ramtron Drive, Colorado Springs, CO 80921
(800) 545-FRAM, (719) 481-7000
http://www.ramtron.com
Page 1 of 15
Features
4Mbit Ferroelectric Nonvolatile RAM
Organized as 256Kx16
Configurable as 512Kx8 Using /UB, /LB
10
14
Read/Write Cycles
NoDelay Writes
Page Mode Operation to 40MHz
Advanced High-Reliability Ferroelectric Process
SRAM Compatible
JEDEC 256Kx16 SRAM Pinout
55 ns Access Time, 110 ns Cycle Time
Advanced Features
Low V
DD
Monitor Protects Memory against
Inadvertent Writes
Software Programmable Block Write Protect
Description
The FM22L16 is a 256Kx16 nonvolatile memory that
reads and writes like a standard SRAM. A
ferroelectric random access memory or FRAM is
nonvolatile, which means that data is retained after
power is removed. It provides data retention for over
10 years while eliminating the reliability concerns,
functional
disadvantages,
complexities of battery-backed SRAM (BBSRAM).
Fast write timing and unlimited write endurance make
FRAM superior to other types of memory.
In-system operation of the FM22L16 is very similar
to other RAM devices and can be used as a drop-in
replacement for standard SRAM. Read and write
cycles may be triggered by /CE or simply by
changing the address. The FRAM memory is
nonvolatile due to its unique ferroelectric memory
process. These features make the FM22L16 ideal for
nonvolatile memory applications requiring frequent
or rapid writes in the form of an SRAM.
The FM22L16 includes a low voltage monitor that
blocks access to the memory array when V
DD
drops
below a critical threshold. The memory is protected
against an inadvertent access and data corruption
under this condition. The device also features
software-controlled write protection. The memory
Superior to Battery-backed SRAM Modules
No Battery Concerns
Monolithic Reliability
True Surface Mount Solution, No Rework Steps
Superior for Moisture, Shock, and Vibration
Low Power Operation
2.7V – 3.6V Power Supply
Low Current Mode (5μA) using ZZ pin
18 mA Active Current
Industry Standard Configuration
Industrial Temperature -40
°
C to +85
°
C
44-pin “Green”/RoHS TSOP-II package
array is divided into 8 uniform blocks, each of which
can be individually write protected.
The device is available in a 400 mil 44-pin TSOP-II
surface mount package. Device specifications are
guaranteed over industrial temperature range –40°C
to +85°C.
and
system
design
Pin Configuration
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A4
A3
A2
A1
A0
CE
A13
A14
DQ0
DQ1
DQ2
DQ3
VDD
VSS
DQ4
DQ5
DQ6
DQ7
WE
A17
A15
A16
A12
/ZZ
A8
A9
A10
A11
OE
UB
A7
A6
A5
VSS
VDD
DQ12
DQ11
DQ10
DQ8
DQ9
LB
DQ15
DQ13
DQ14
Ordering Information
55 ns access, 44-pin
“Green”/RoHS TSOP-II
FM22L16-55-TG
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|---|---|
| FM2400TSIM | MODULATOR |
| FM24C16A | 16Kb FRAM Serial Memory |
| FM24C16A-S | 16Kb FRAM Serial Memory |
| FM24C64 | FM24C64 |
| FM24CL04 | 4Kb FRAM Serial 3V Memory |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FM22L16-55-TG | 制造商:Ramtron International Corporation 功能描述:NVRAM Memory IC |
| FM22L16-55-TGTR | 功能描述:F-RAM 4M (256Kx16) 55ns F-RAM RoHS:否 存儲容量:512 Kbit 組織:64 K x 8 接口:SPI 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube 制造商:Cypress Semiconductor |
| FM22L16-60-TGTR | 制造商:Cypress Semiconductor 功能描述:2MBIT F-RAM MEMORY - Tape and Reel |
| FM22LD16 | 制造商:RAMTRON 制造商全稱:RAMTRON 功能描述:4Mbit F-RAM Memory |
| FM22LD16_09 | 制造商:RAMTRON 制造商全稱:RAMTRON 功能描述:4Mbit F-RAM Memory |
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