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參數(shù)資料
| 型號(hào)： | FM250C |
| 廠商： | RECTRON LTD |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 60 Volts CURRENT 2.0 Ampere |
| 中文描述： | 2 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AB |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 44K |
| 代理商： | FM250C |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
VOLTAGE RANGE 20 to 60 Volts CURRENT 2.0 Ampere
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FEATURES
* Low switching noise
* Low forward voltage drop
* High current capability
* High switching capability
* High surge capabitity
* High reliability
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: Device has UL flammability classification 94V-O
* Lead: MIL-STD-202E method 208C guaranteed
* Metallurgically bonded construction
* Mounting position: Any
* Weight: 0.24 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
FM220C
THRU
FM260C
DO-214AB
MAXIMUM RATINGS
(At T
A
= 25
o
C unless otherwise noted)
ELECTRICAL CHARACTERISTICS
(At T
A
= 25
o
C unless otherwise noted)
NOTES :
1. Thermal Resistance (Junction to Ambient): Vertical PC Board Mounting, 0.5” (12.7mm) Lead Length.
2. Measured at 1 MHz and applied reverse voltage of 4.0 volts.
Dimensions in inches and (millimeters)
2002-6
CHARACTERISTICS
Maximum Average Reverse Current
at Rated DC Blocking Voltage
V
F
SYMBOL
I
R
mAmps
mAmps
Maximum Instantaneous Forward Voltage at 2.0A DC
Volts
1.0
10
@T
A
= 25
@T
A
= 100
o
C
o
C
.55
.70
UNITS
FM220C
FM240C
FM250C
FM260C
FM230C
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at Derating Lead Temperature
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 1)
Typical Junction Capacitance (Note 2)
SYMBOL
V
RRM
V
DC
I
FSM
C
J
T
STG
V
RMS
UNITS
Volts
Volts
Volts
Amps
2.0
50
40
130
Amps
0
C/W
0
C
Storage Temperature Range
R
θ
J A
I
O
-65 to + 125
pF
Operating Temperature Range
T
J
FM220C
20
FM240C
40
FM250C
50
FM260C
60
FM230C
30
14
28
35
42
21
20
40
50
60
30
-65 to + 150
-65 to + 150
0
C
0.006 (0.152)
0.012 (0.305)
0.008 (0.203)
0.004 (0.102)
0.320 (8.13)
0.305 (7.75)
0.030 (0.76)
0.060 (1.52)
0.079 (2.06)
0.103 (2.62)
0.260 (6.60)
0.280 (7.11)
0.220 (5.59)
0.245 (6.22)
0.125 (3.17)
0.115 (2.92)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FM250-C | 制造商:FORMOSA 制造商全稱:Formosa MS 功能描述:Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM250L | 制造商:RECTRON 制造商全稱:Rectron Semiconductor 功能描述:SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 200 Volts CURRENT 2.0 Ampere |
| FM250-L | 制造商:FORMOSA 制造商全稱:Formosa MS 功能描述:Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM250-LN | 制造商:FORMOSA 制造商全稱:Formosa MS 功能描述:Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM250-M | 制造商:PACELEADER 制造商全稱:PACELEADER INDUSTRIAL 功能描述:SILICON EPITAXIAL PLANCE TYPE |
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