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參數資料
| 型號： | FM27C256QE120 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 262,144-Bit (32K x 8) High Performance CMOS EPROM |
| 中文描述： | 32K X 8 UVPROM, 120 ns, CDIP28 |
| 封裝： | WINDOWED, CERDIP-28 |
| 文件頁數： | 8/10頁 |
| 文件大小： | 103K |
| 代理商： | FM27C256QE120 |
8
www.fairchildsemi.com
F
FM27C256
Functional Description
(Continued)
ERASURE CHARACTERISTICS
The erasure characteristics of the device are such that erasure
begins to occur when exposed to light with wavelengths shorter
than approximately 4000 Angstroms (
). It should be noted that
sunlight and certain types of fluorescent lamps have wavelengths
in the 3000
–
4000
range.
The recommended erasure procedure for the EPROM is expo-
sure to short wave ultraviolet light which has a wavelength of
2537
. The integrated dose (i.e., UV intensity x exposure time) for
erasure should be a minimum of 15W-sec/cm
2
.
The EPROM should be placed within 1 inch of the lamp tubes
during erasure. Some lamps have a filter on their tubes which
should be removed before erasure
An erasure system should be calibrated periodically. The distance
from lamp to device should be maintained at one inch. The erasure
time increases as the square of the distance from the lamp (if
distance is doubled the erasure time increases by factor of 4).
Lamps lose intensity as they age. When a lamp is changed, the
distance has changed, or the lamp has aged, the system should
be checked to make certain full erasure is occurring. Incomplete
erasure will cause symptoms that can be misleading. Program-
mers, components, and even system designs have been errone-
ously suspected when incomplete erasure was the problem.
SYSTEM CONSIDERATION
The power switching characteristics of EPROMs require careful
decoupling of the devices. The supply current, I
CC,
has three
segments that are of interest to the system designer: the standby
current level, the active current level, and the transient current
peaks that are produced by voltage transitions on input pins. The
magnitude of these transient current peaks is dependent of the
output capacitance loading of the device. The associated V
CC
transient voltage peaks can be suppressed by properly selected
decoupling capacitors. It is recommended that at least a 0.1
μ
F
ceramic capacitor be used on every device between V
CC
and
GND. This should be a high frequency capacitor of low inherent
inductance. In addition, at least a 4.7
μ
F bulk electrolytic capacitor
should be used between V
CC
and GND for each eight devices. The
bulk capacitor should be located near where the power supply is
connected to the array. The purpose of the bulk capacitor is to
overcome the voltage drop caused by the inductive effects of the
PC board traces.
Mode Selection
The modes of operation of FM27C256 listed in Table 1. A single 5V power supply is required in the read mode. All inputs are TTL levels
except for V
PP
and A9 for device signature.
TABLE 1. Modes Selection
Pins
CE/PGM
OE
V
PP
V
CC
Outputs
Mode
Read
V
IL
V
IL
V
CC
5.0V
D
OUT
Output Disable
X
V
IH
V
CC
5.0V
High-Z
(Note 16)
Standby
V
IH
X
V
CC
5.0V
High-Z
Programming
V
IL
VIH
12.75V
6.25V
D
IN
Program Verify
V
IH
V
IL
12.75V
6.25V
D
OUT
Program Inhibit
V
IH
V
IH
12.75V
6.25V
High-Z
Note 16:
X can be V
IL
or V
IH
.
TABLE 2. Manufacturer’s Identification Code
Pins
A0
(10)
A9
(24)
O7
(19)
O6
(18)
O5
(17)
O4
(16)
O3
(15)
O2
(13)
O1
(12)
O0
(11)
Hex
Data
Manufacturer Code
V
IL
12V
1
0
0
0
1
1
1
1
8F
Device Code
V
IH
12V
0
0
0
0
0
1
0
0
04
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相關代理商/技術參數 |
參數描述 |
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| FM27C256QE150 | 功能描述:可擦除可編程ROM DIP-28 RoHS:否 制造商:Maxim Integrated 類型: 存儲容量:1024 bit 組織:1 K x 1 接口類型: 工作電流:5 uA 編程電壓: 工作電源電壓:2.8 V to 6 V 最大工作溫度:+ 85 C 安裝風格:Through Hole 封裝 / 箱體:TO-92 |
| FM27C256QE45 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EPROM |
| FM27C256QE55 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EPROM |
| FM27C256QE70 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EPROM |
| FM27C256QE90 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EPROM |
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