- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375849 > FM2G400US60 (FAIRCHILD SEMICONDUCTOR CORP) Signal Generator; Bandwidth Max:10MHz; Sweep Rate Range:100:1 lin/log; Sweep Time Range:0.5 Sec to 30 Sec; Accuracy:20Hz to 100kHz ( 3%)<Linebreak/>; 120/150kHz ( 5%); Battery Size Code:9V; Frequency Max:5MHz; Frequency Min:0.2Hz PDF資料下載
參數(shù)資料
| 型號(hào)： | FM2G400US60 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Signal Generator; Bandwidth Max:10MHz; Sweep Rate Range:100:1 lin/log; Sweep Time Range:0.5 Sec to 30 Sec; Accuracy:20Hz to 100kHz ( 3%)<Linebreak/>; 120/150kHz ( 5%); Battery Size Code:9V; Frequency Max:5MHz; Frequency Min:0.2Hz |
| 中文描述： | 400 A, 600 V, N-CHANNEL IGBT |
| 封裝： | 7PM-AA, 7 PIN |
| 文件頁(yè)數(shù)： | 2/9頁(yè) |
| 文件大小： | 464K |
| 代理商： | FM2G400US60 |
2001 Fairchild Semiconductor Corporation
FM2G400US60 Rev. A
F
Electrical Characteristics of IGBT
T
C
= 25
°
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
CES
Collector-Emitter Breakdown Voltage
B
VCES
/
T
J
Voltage
I
CES
Collector Cut-Off Current
I
GES
G-E Leakage Current
V
GE
= 0V, I
C
= 250uA
600
--
--
V
Temperature Coeff. of Breakdown
V
GE
= 0V, I
C
= 1mA
--
0.6
--
V/
°
C
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
--
--
--
--
250
±
100
uA
nA
On Characteristics
V
GE(th)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
V
GE
= V
CE
, I
C
= 400mA
5.0
6.0
8.5
V
V
CE(sat)
I
C
= 400A
,
V
GE
= 15V
--
2.2
2.8
V
Dynamic Characteristics
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
V
CE
= 30V
,
V
GE
= 0V,
f = 1MHz
--
--
--
66000
3600
1980
--
--
--
pF
pF
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
ts
Total Switching Loss
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
ts
Total Switching Loss
V
CC
= 300 V, I
C
= 400A,
R
G
= 1.6
, V
GE
= 15V
Inductive Load, T
C
= 25
°
C
--
--
--
--
--
--
--
--
--
--
--
--
--
--
870
550
720
178
36
22
58
1230
580
890
190
52
24
75
--
--
--
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
250
--
--
116
--
--
--
--
--
--
--
V
CC
= 300 V, I
C
= 400A,
R
G
= 1.6
, V
GE
= 15V
Inductive Load, T
C
= 125
°
C
T
sc
Short Circuit Withstand Time
V
CC
= 300 V, V
GE
= 15V
@
T
C
= 100
°
C
10
--
--
us
Q
g
Q
ge
Q
gc
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
V
CE
= 300 V, I
C
= 400A,
V
GE
= 15V
--
--
--
1800
350
750
2700
--
--
nC
nC
nC
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FM3104-S | Integrated Processor Companion with Memory |
| FM3116-S | Integrated Processor Companion with Memory |
| FM31256-S | Integrated Processor Companion with Memory |
| FM3164-S | Integrated Processor Companion with Memory |
| FM3204 | Integrated Processor Companion with Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FM2G50US60 | 功能描述:IGBT 模塊 RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FM2G75US60 | 功能描述:IGBT 模塊 RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FM2-LAIRD | 制造商:Laird Technologies Inc 功能描述:ANTENNA HARDWARE/ACCESSORY |
| FM2SP | 功能描述:ACCY MOUNTING KIT HD 2.5 MAST RoHS:是 類別:RF/IF 和 RFID >> RF配件 系列:* 標(biāo)準(zhǔn)包裝:1 系列:* |
| FM2STST05M | 制造商:MISC WIRE AND CABLE 功能描述: |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。