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參數(shù)資料
| 型號： | FM3164-S |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Integrated Processor Companion with Memory |
| 中文描述： | 綜合處理器與記憶體伴侶 |
| 文件頁數(shù)： | 18/22頁 |
| 文件大小： | 286K |
| 代理商： | FM3164-S |
Electrical Specifications
Absolute Maximum Ratings
Symbol
V
DD
V
IN
FM3104/16/64/256
Rev 0.2
May 2003
Page 18 of 22
Description
Ratings
-1.0V to +7.0V
-1.0V to +7.0V and
V
IN
≤
V
DD
+1.0V except SCL, SDA
-1.0V to +4.5V
-55
°
C to + 125
°
C
300
°
C
Power Supply Voltage with respect to V
SS
Voltage on any signal pin with respect to V
SS
V
BAK
T
STG
T
LEAD
Backup Supply Voltage
Storage Temperature
Lead Temperature (Soldering, 10 seconds)
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating
only, and the functional operation of the device at these or any other conditions above those listed in the operational section of this
specification is not implied. Exposure to absolute maximum ratings conditions for extended periods may affect device reliability.
DC Operating Conditions
(
T
A
= -40
°
C to + 85
°
C, V
DD
= 2.7V to 5.5V unless otherwise specified)
Symbol
Parameter
V
DD
Main Power Supply
I
DD
V
DD
Supply Current
@ SCL = 100 kHz
@ SCL = 400 kHz
@ SCL = 1 MHz
I
SB
Standby Current
V
BAK
RTC Backup Supply Voltage
I
BAK
RTC Backup Supply Current
I
BAKTC
Trickle Charge Current
V
TPT
Tolerance on V
DD
trip point voltage
V
RST
V
DD
for valid /RST @ I
OL
= 80
μ
A at V
OL
V
BAK
> V
BAK
min
V
BAK
< V
BAK
min
I
LI
Input Leakage Current
I
LO
Output Leakage Current
V
IL
Input Low Voltage
All inputs except as listed
CNT1-2 battery backed (V
DD
< 2.5V)
CNT1-2 (V
DD
> 2.5V)
V
IH
Input High Voltage
All inputs except as listed
PFI (power fail input)
CNT1-2 battery backed (V
DD
< 2.5V)
CNT1-2 V
DD
> 2.5V
V
OL
Output Low Voltage (I
OL
= 3 mA)
V
OH
Output High Voltage (I
OH
= -2 mA)
R
RST
Pull-up resistance for /RST inactive
R
IN
Input Resistance
A1-A0 for V
IN
= V
IL
max
A1-A0 for V
IN
= V
IH
min
PFI input
V
HYS
Power Fail Input (PFI) Hysteresis
Notes
1.
SCL toggling between V
DD
-0.3V and V
SS
, other inputs V
SS
or V
DD
-0.3V
2.
All inputs at V
SS
or V
DD,
static. Stop command issued.
3.
V
IN
or V
OUT
= V
SS
to V
DD
. Does not apply to A0, A1, PFI, or /RST pins.
4.
This parameter is characterized but not tested.
5.
V
BAK
= 3.0V, V
DD
< 2.4V, oscillator running, CNT1-2 at V
BAK
.
6.
/RST is asserted active when V
DD
< V
TP
.
Min
2.7
Typ
Max
5.5
500
900
1500
150
3.75
1
8.0
+50
Units
V
μ
A
μ
A
μ
A
μ
A
V
μ
A
μ
A
mV
V
V
μ
A
μ
A
V
V
V
V
V
V
V
V
V
K
K
M
M
mV
Notes
8
1
2
10
5
11
6
7
2.0
4.0
-50
0
1.6
-0.3
-0.3
-0.3
0.7 V
DD
-
V
BAK
– 0.5
TBD
2.4
50
20
1
1
100
3.0
-
1
1
3
3
9
0.3 V
DD
0.5
0.8
V
DD
+ 0.5
V
BAK
V
BAK
+ 0.5
V
DD
+ 0.5
0.4
400
400
4
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| FM3164-STR | 功能描述:監(jiān)控電路 64K w/RTC Pwr Mon WDT Bat Sw PF RoHS:否 制造商:STMicroelectronics 監(jiān)測電壓數(shù): 監(jiān)測電壓: 欠電壓閾值: 過電壓閾值: 輸出類型:Active Low, Open Drain 人工復(fù)位:Resettable 監(jiān)視器:No Watchdog 電池備用開關(guān):No Backup 上電復(fù)位延遲（典型值）:10 s 電源電壓-最大:5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:UDFN-6 封裝:Reel |
| FM31L272 | 制造商:RAMTRON 制造商全稱:RAMTRON 功能描述:3V Integrated Processor Companion with Memory |
| FM31L272-G | 功能描述:F-RAM 4K w/RTC Pwr Mon WDT Bat Sw PF RoHS:否 存儲容量:512 Kbit 組織:64 K x 8 接口:SPI 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube 制造商:Cypress Semiconductor |
| FM31L272-GTR | 功能描述:F-RAM 4K w/RTC Pwr Mon WDT Bat Sw PF RoHS:否 存儲容量:512 Kbit 組織:64 K x 8 接口:SPI 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube 制造商:Cypress Semiconductor |
| FM31L274 | 制造商:RAMTRON 制造商全稱:RAMTRON 功能描述:3V Integrated Processor Companion with Memory |
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