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參數(shù)資料
| 型號(hào)： | FM330-ALN |
| 廠商： | 美麗微半導(dǎo)體有限公司 |
| 英文描述： | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| 中文描述： | 肖特基二極管芯片-硅外延式龍門(mén) |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 72K |
| 代理商： | FM330-ALN |
Chip Schottky Barrier Diodes
Silicon epitaxial planer type
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
Mechanical data
Case : Molded plastic, JEDECDO-214AC
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : 0.0015 ounce, 0.05 gram
FM320-ALN THRU FM3100-ALN
Formosa MS
(V)
(V)
(V)
(V)
(
o
C)
FM320-ALN
SS32
20
14
20
FM330-ALN
SS33
30
21
30
FM340-ALN
SS34
40
28
40
FM350-ALN
SS35
50
35
50
FM360-ALN
SS36
60
42
60
FM380-ALN
SS38
80
56
80
FM3100-ALN
S310
100
70
100
SYMBOLS
MARKING
CODE
Operating
temperature
V
RRM
*1
V
RMS
*2
V
R
*3
V
F
*4
0.50
0.75
0.85
-55 to +125
-55 to +150
MAXIMUM RATINGS
(AT T
A
=25
o
C unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
Forward rectified current
See Fig.1
I
O
3.0
A
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
I
FSM
80
A
V
R
= V
RRM
T
A
= 25
o
C
0.5
mA
V
R
= V
RRM
T
A
= 125
o
C
20
mA
Thermal resistance
Junction to ambient
R
q
JA
80
o
C / w
Diode junction capacitance
f=1MHz and applied 4vDC reverse voltage
C
J
250
pF
Storage temperature
T
STG
-55
+150
o
C
Reverse current
I
R
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
0.205(5.2)
0.189(4.8)
0.012(0.3) Typ.
0.110(2.8)
0.094(2.4)
0.181(4.6)
0.165(4.2)
0.075(1.9)
0.067(1.7)
0.040 (1.0) Typ.
0.040(1.0) Typ.
0.067(1.7)
0.053(1.3)
Dimensions in inches and (millimeters)
SMA-LN
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FM3100-ALN | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM380-ALN | TERM STRIP,2X10,2MM,.020SQ,TH |
| FM320-ALN | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM340-ALN | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM360-ALN | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FM330-AN | 制造商:FORMOSA 制造商全稱(chēng):Formosa MS 功能描述:Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM330B | 制造商:RECTRON 制造商全稱(chēng):Rectron Semiconductor 功能描述:SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 60 Volts CURRENT 3.0 Amperes |
| FM330-B | 制造商:FORMOSA 制造商全稱(chēng):Formosa MS 功能描述:Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM330C | 制造商:Black Box Corporation 功能描述:WALLPLATE BLANK INSERT OFFICE WHITE 20 PACK |
| FM330L | 制造商:RECTRON 制造商全稱(chēng):Rectron Semiconductor 功能描述:SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 200 Volts CURRENT 3.0 Ampere |
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