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參數(shù)資料
| 型號(hào)： | FM400TU-2A |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | HIGH POWER SWITCHING USE INSULATED PACKAGE |
| 中文描述： | 大功率開(kāi)關(guān)使用絕緣包裝 |
| 文件頁(yè)數(shù)： | 4/5頁(yè) |
| 文件大小： | 117K |
| 代理商： | FM400TU-2A |
May 2006
MITSUBISHI <MOSFET MODULE>
FM400TU-2A
HIGH POWER SWITCHING USE
INSULATED PACKAGE
0
4
8
12
16
20
10
1
10
2
2
3
5
7
10
3
2
3
5
7
10
1
10
2
2
3
5
7
10
3
2
3
5
7
10
1
10
2
2
3
5
7
10
3
2
3
5
7
10
1
10
2
2
3
5
7
10
3
2
3
5
7
10
4
2
3
5
7
0
10
30
50
70
20
40
60
0
10
30
50
70
20
40
60
10
–2
10
–1
2
3
5
7
10
0
2
3
5
7
10
1
2
3
5
7
10
1
10
2
2
3
5
7
10
3
2
3
5
7
10
–2
7
5
3
2
10
–1
7
5
3
2
10
0
7
5
3
2
10
1
7
5
3
2
10
2
0
400
800
1200
1600
200
600
1000
1400
1800
0.5
0.6
0.7
0.8
0.9
1.0
V
GS
= 0V
T
ch
= 25
°
C
T
ch
= 125
°
C
V
DD
= 24V
V
DD
= 48V
I
D
= 200A
Conditions:
V
DD
= 48V
V
GS
=
±
15V
R
G
= 6.3
T
ch
= 125
°
C
Inductive load
t
d(off)
Conditions:
V
DD
= 48V
V
GS
=
±
15V
R
G
= 6.3
T
ch
= 125
°
C
Inductive load
E
sw(off)
E
sw(on)
E
rr
Conditions:
V
DD
= 48V
V
GS
=
±
15V
I
D
= 200A
T
ch
= 125
°
C
Inductive load
E
sw(off)
E
sw(on)
E
rr
t
d(on)
t
f
t
r
Conditions:
V
DD
= 48V
V
GS
=
±
15V
I
D
= 200A
T
ch
= 125
°
C
Inductive load
t
d(off)
t
d(on)
t
r
t
f
GATE CHARGE CHARACTERISTICS
(TYPICAL)
G
G
(
GATE CHARGE Q
G
(nC)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
S
S
(
SOURCE-DRAIN VOLTAGE V
SD
(V)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
S
(
DRAIN CURRENT I
D
(A)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
S
(
GATE RESISTANCE R
G
(
)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
S
(
DRAIN CURRENT I
D
(A)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
S
(
GATE RESISTANCE R
G
(
)
Chip
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| FM400TU-2A_09 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MOSFET MODULE HIGH POWER SWITCHING USE INSULATED PACKAGE |
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| FM400TU-3A_09 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MOSFET MODULE HIGH POWER SWITCHING USE INSULATED PACKAGE |
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