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參數資料
| 型號： | FM600TU-3A |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | HIGH POWER SWITCHING USE INSULATED PACKAGE |
| 中文描述： | 大功率開關使用絕緣包裝 |
| 文件頁數： | 2/5頁 |
| 文件大?。?/td> | 117K |
| 代理商： | FM600TU-3A |
May 2006
75
±
20
300
600
300
300
600
960
1300
–40 ~ +150
–40 ~ +125
2500
3.5 ~ 4.5
3.5 ~ 4.5
600
MITSUBISHI <MOSFET MODULE>
FM600TU-07A
HIGH POWER SWITCHING USE
INSULATED PACKAGE
V
V
A
A
A
A
A
W
W
°
C
°
C
V
N m
N m
g
Drain-source voltage
Gate-source voltage
Drain current
Avalanche current
Source current
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
G-S Short
D-S Short
T
C
’ = 139
°
C*
3
Pulse*
2
L = 10
μ
H Pulse*
2
Pulse*
2
T
C
= 25
°
C
T
C
’ = 25
°
C*
3
Main terminal to base plate, AC 1 min.
Main Terminal M6
Mounting M6
Typical value
Unit
Ratings
V
DSS
V
GSS
I
D
I
DM
I
DA
I
S
*
1
I
SM
*
1
P
D
*
4
P
D
*
4
T
ch
T
stg
V
iso
—
—
ABSOLUTE MAXIMUM RATINGS
(T
ch
= 25
°
C unless otherwise specified.)
Conditions
Item
Symbol
*
1: It is characteristics of the anti-parallel, source to drain free-wheel diode (FWDi).
*
2: Pulse width and repetition rate should be such that the device channel temperature (T
ch
) does not exceed T
ch
max rating.
*
3: T
C
’ measured point is just under the chips. If use this value, R
th(f-a)
should be measured just under the chips.
*
4: Pulse width and repetition rate should be such as to cause negligible temperature rise.
*
5: T
TH
is thermistor temperature.
*
6: B = (InR
1
-InR
2
)/(1/T
1
-1/T
2
) R
1
: Resistance at T
1
(K), R
2
: Resistance at T
2
(K)
*
7: T
C
measured point is shown in page OUTLINE DRAWING.
*
8: Typical value is measured by using Shin-Etsu Chemical Co., Ltd “G-746”.
ELECTRICAL CHARACTERISTICS
(T
ch
= 25
°
C unless otherwise specified.)
Min.
—
4.7
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
mA
V
μ
A
m
V
m
nF
nC
ns
ns
μ
C
V
°
C/W
Drain cutoff current
Gate-source threshold voltage
Gate leakage current
Static drain-source
On-state resistance
Static drain-source
On-state voltage
Lead resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Source-drain voltage
Thermal resistance
Contact thermal resistance
V
DS
= V
DSS
, V
GS
= 0V
I
D
= 30mA, V
DS
= 10V
V
GS
= V
GSS
, V
DS
= 0V
I
D
= 300A
V
GS
= 15V
I
D
= 300A
V
GS
= 15V
I
D
= 300A
terminal-chip
V
DS
= 10V
V
GS
= 0V
V
DD
= 48V, I
D
= 300A, V
GS
= 15V
V
DD
= 48V, I
D
= 300A, V
GS1
= V
GS2
= 15V
R
G
= 4.2
, Inductive load switching operation
I
S
= 300A
I
S
= 300A, V
GS
= 0V
MOSFET part (1/6 module)*
7
MOSFET part (1/6 module)*
3
Case to fin, Thermal grease Applied*
8
(1/6 module)
Case to fin, Thermal grease Applied*
3,
*
8
(1/6 module)
Unit
Limits
Typ.
—
6
—
0.53
0.87
0.16
0.26
0.7
1.0
—
—
—
1650
—
—
—
—
—
4.8
—
—
—
0.1
0.09
I
DSS
V
GS(th)
I
GSS
r
DS(ON)
(chip)
V
DS(ON)
(chip)
R
(lead)
C
iss
C
oss
C
rss
Q
G
t
d(on)
t
r
t
d(off)
t
f
t
rr
*
1
Q
rr
*
1
V
SD
*
1
R
th(ch-c)
R
th(ch-c’)
R
th(c-f)
R
th(c’-f’)
Conditions
Item
Symbol
Max.
1
7.3
1.5
0.73
—
0.22
—
—
—
110
15
10
—
450
600
600
600
200
—
1.3
0.13
0.096
—
—
T
ch
= 25
°
C
T
ch
= 125
°
C
T
ch
= 25
°
C
T
ch
= 125
°
C
T
ch
= 25
°
C
T
ch
= 125
°
C
THERMISTOR PART
Min.
—
—
Unit
Limits
Typ.
100
4000
Conditions
Parameter
Symbol
Max.
—
—
k
K
Resistance
B Constant
T
TH
= 25
°
C*
5
Resistance at T
TH
= 25
°
C, 50
°
C*
5
R
TH
*
6
B*
6
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