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參數(shù)資料
| 型號： | FM860-B |
| 廠商： | 美麗微半導體有限公司 |
| 英文描述： | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| 中文描述： | 肖特基二極管芯片-硅外延式龍門 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 78K |
| 代理商： | FM860-B |
0.1
1.0
.01
10
50
RATING AND CHARACTERISTIC CURVES (FM820-B THRU FM860-B)
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT,(A)
FIG.3-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
FIG.4-TYPICAL JUNCTION CAPACITANCE
REVERSE VOLTAGE,(V)
JUNCTION CAPACITANCE,(pF)
INSTANTANEOUS FORWARD CURRENT,(A)
FORWARD VOLTAGE,(V)
Pulse Width 300us
1% Duty Cycle
2
4
6
8
10
12
2000
2400
2800
1600
1200
800
400
0
.01 .05 .1 .5 1 5 10 50 100
.1 .3 .5 .7 .9 1.1 1.3 1.5
.1
1.0
10
100
FIG.5 - TYPICAL REVERSE
CHARACTERISTICS
REVERSE LEAKAGE CURRENT, (mA)
0 20 40 60 80 100 120 140
.01
Tj=75 C
Tj=25 C
Tj=25 C
100
50
0
150
250
200
NUMBER OF CYCLES AT 60Hz
1
10
5
50
100
Tj=25 C
8.3ms Single Half
Sine Wave
JEDEC method
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
0
0
20
40
60
80
100
120
140
160
180
200
CASE TEMPERATURE,( C)
FIG.2-TYPICAL FORWARD
CHARACTERISTICS
PEAK FORWARD SURGE CURRENT,(A)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FM850-B | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM860-T | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM850-T | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM860 | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM850 | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FM860-T | 制造商:FORMOSA 制造商全稱:Formosa MS 功能描述:Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM860-T1 | 制造商:PACELEADER 制造商全稱:PACELEADER INDUSTRIAL 功能描述:SILICON EPITAXIAL PLANCE TYPE |
| FM-88 | 制造商:Distributed By MCM 功能描述:FM Trap |
| FM8P51 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EPROM/ROM-Based 8-Bit Microcontroller |
| FM8P51E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EPROM/ROM-Based 8-Bit Microcontroller |
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