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參數資料
型號: FM93C06EM8
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: Microwire Serial EEPROM
中文描述: 16 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
封裝: 0.150 INCH, PLASTIC, SO-8
文件頁數: 7/13頁
文件大小: 114K
代理商: FM93C06EM8
7
www.fairchildsemi.com
FM93C06 Rev. C.1
F
(
T
The Erase all instruction will program all locations to a logical
1
state. Input information (Start bit, Opcode and Address) for this
WDS instruction should be issued as listed under Table1. After
inputting the last bit of data (A0 bit), CS signal must be brought low
before the next rising edge of the SK clock. This falling edge of the
CS initiates the self-timed programming cycle. It takes t
WP
time
(Refer appropriate DC and AC Electrical Characteristics table) for
the internal programming cycle to finish. During this time, the
device remains busy and is not ready for another instruction.
Status of the internal programming can be polled as described
under WRITE instruction description. While the device is busy, it
is recommended that no new instruction be issued. Refer Erase
All cycle diagram.
Note:
The Fairchild CMOS EEPROMs do not require an
ERASE
or
ERASE ALL
instruction prior to the
WRITE
or
WRITE ALL
instruction, respectively. The
ERASE
and
ERASE ALL
instructions are included to maintain compatibility with
earlier technology EEPROMs.Clearing of Ready/Busy status
When programming is in progress, the Data-Out pin will display
the programming status as either BUSY (low) or READY (high)
when CS is brought high (DO output will be tri-stated when CS is
low). To restate, during programming, the CS pin may be brought
high and low any number of times to view the programming status
without affecting the programming operation. Once programming
is completed (Output in READY state), the output is
cleared
(returned to normal tri-state condition) by clocking in a Start Bit.
After the Start Bit is clocked in, the output will return to a tri-stated
condition. When clocked in, this Start Bit can be the first bit in a
command string, or CS can be brought low again to reset all
internal circuits. Refer Clearing Ready Statusdiagram.
Related Document
Application Note: AN758 - Using Fairchild
s MICROWIRE
EE-
PROM.
相關PDF資料
PDF描述
FM93C06EMT8 Microwire Serial EEPROM
FM93C06EN Microwire Serial EEPROM
FM93C06LEM8 Microwire Serial EEPROM
FM93C06LEMT8 Microwire Serial EEPROM
FM93C06LEN Microwire Serial EEPROM
相關代理商/技術參數
參數描述
FM93C06EM8X 功能描述:電可擦除可編程只讀存儲器 SOIC-8 RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數據保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8
FM93C06EMT8 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Microwire Serial EEPROM
FM93C06EN 功能描述:電可擦除可編程只讀存儲器 USE 511-M93C46-BN6 RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數據保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8
FM93C06LEM8 功能描述:電可擦除可編程只讀存儲器 USE 511-M93C46-WMN6 RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數據保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8
FM93C06LEM8X 功能描述:電可擦除可編程只讀存儲器 SOIC-8 RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數據保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8
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