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參數(shù)資料
| 型號： | FM93C66LVN |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | Microwire Serial EEPROM |
| 中文描述： | 256 X 16 MICROWIRE BUS SERIAL EEPROM, PDIP8 |
| 封裝： | PLASTIC, DIP-8 |
| 文件頁數(shù)： | 7/13頁 |
| 文件大小： | 114K |
| 代理商： | FM93C66LVN |
7
www.fairchildsemi.com
FM93C66 Rev. C.1
F
(
T
The Erase all instruction will program all locations to a logical
“
1
”
state. Input information (Start bit, Opcode and Address) for this
WDS instruction should be issued as listed under Table1. After
inputting the last bit of data (A0 bit), CS signal must be brought low
before the next rising edge of the SK clock. This falling edge of the
CS initiates the self-timed programming cycle. It takes t
WP
time
(Refer appropriate DC and AC Electrical Characteristics table) for
the internal programming cycle to finish. During this time, the
device remains busy and is not ready for another instruction.
Status of the internal programming can be polled as described
under WRITE instruction description. While the device is busy, it
is recommended that no new instruction be issued. Refer Erase
All cycle diagram.
Note:
The Fairchild CMOS EEPROMs do not require an
“
ERASE
”
or
“
ERASE ALL
”
instruction prior to the
“
WRITE
”
or
“
WRITE ALL
”
instruction, respectively. The
“
ERASE
”
and
“
ERASE ALL
”
instructions are included to maintain compatibility with
earlier technology EEPROMs.Clearing of Ready/Busy status
When programming is in progress, the Data-Out pin will display
the programming status as either BUSY (low) or READY (high)
when CS is brought high (DO output will be tri-stated when CS is
low). To restate, during programming, the CS pin may be brought
high and low any number of times to view the programming status
without affecting the programming operation. Once programming
is completed (Output in READY state), the output is
‘
cleared
’
(returned to normal tri-state condition) by clocking in a Start Bit.
After the Start Bit is clocked in, the output will return to a tri-stated
condition. When clocked in, this Start Bit can be the first bit in a
command string, or CS can be brought low again to reset all
internal circuits. Refer Clearing Ready Statusdiagram.
Related Document
Application Note: AN758 - Using Fairchild
’
s MICROWIRE
EE-
PROM.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FM93C66LZEM8 | Microwire Serial EEPROM |
| FM93C66LZEMT8 | Microwire Serial EEPROM |
| FM93C66LZEN | Enhanced Product High-Speed Pwm Controller 16-SOIC -55 to 125 |
| FM93C66LZM8 | Microwire Serial EEPROM |
| FM93C66LZMT8 | Microwire Serial EEPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FM93C66LZEM8 | 功能描述:電可擦除可編程只讀存儲器 SOIC-8 RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| FM93C66LZEMT8 | 功能描述:電可擦除可編程只讀存儲器 TSSOP-8 RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| FM93C66LZEMT8X | 功能描述:電可擦除可編程只讀存儲器 TSSOP-8 RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| FM93C66LZEN | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Microwire Serial EEPROM |
| FM93C66LZM8 | 功能描述:電可擦除可編程只讀存儲器 SOIC-8 RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
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