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參數(shù)資料
| 型號： | FMB100 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN Multi-Chip General Purpose Amplifier |
| 中文描述： | 500 mA, 45 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SUPERSOT-6 |
| 文件頁數(shù)： | 3/3頁 |
| 文件大小： | 44K |
| 代理商： | FMB100 |
F
Typical Characteristics
(continued)
NPN Multi-Chip General Purpose Amplifier
(continued)
Base-Emitter Saturation
Voltage vs Collector Current
0.1
1
10
100
300
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
β
= 10
B
25 °C
- 40 °C
125 °C
Base-Emitter ON Voltage vs
Collector Current
1
10
100
500
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
B
V = 5V
25 °C
- 40 °C
125 °C
Collector-Cutoff Current
vs Ambient Temperature
25
50
T - AMBIENT TEMPERATURE (o
75
100
125
150
0.1
1
10
I
C
V = 60V
Input and Output Capacitance
vs Reverse Voltage
0.1
1
10
100
0.1
1
10
100
ce
C
Cib
Cob
f = 1.0 MHz
Switching Times vs
Collector Current
10
20
I - COLLECTOR CURRENT (mA)
30
50
100
200
300
0
30
60
90
120
150
180
210
240
270
300
T
IB1 = IB2 = Ic / 10
V = 10 V
t
s
t
d
t
f
t
r
Power Dissipation vs
Ambient Temperature
0
25
50
TEMPERATURE ( C)
75
100
125
150
0
0.25
0.5
0.75
1
P
D
SOT-6
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FMB100_Q | 功能描述:兩極晶體管 - BJT NPN Multi-Chip Trans General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FMB100DYFD | 制造商:Sullins Connector Solutions 功能描述:CONN CARDEDGE DL 200POS .050 SMD |
| FMB100DYFN | 制造商:Sullins Connector Solutions 功能描述:CONN CARDEDGE DL 200POS .050 SMD |
| FMB100DYFT | 制造商:Sullins Connector Solutions 功能描述:CONN CARDEDGE DL 200POS .050 SMD |
| FMB100DYHD | 制造商:Sullins Connector Solutions 功能描述:CONN EDGE DUAL .050 TH 200POS |
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