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參數資料
| 型號： | FMB5551 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN General Purpose Amplifier SuperSOT-6 Surface Mount Package |
| 中文描述： | 600 mA, 160 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SUPERSOT-6 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 29K |
| 代理商： | FMB5551 |
2002 Fairchild Semiconductor Corporation
Rev. A, January 2002
F
Absolute Maximum Ratings
T
a
=25
°
C
unless otherwise noted
Symbol
V
CEO
Collector-Emitter Voltage
V
CBO
Collector-Base Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current (DC)
P
C
Collector Dissipation (T
a
=25
°
C) *
T
J
Junction Temperature
T
STG
Storage Temperature Range
R
θ
JA
Thermal Resistance, Junction to Ambient
* Pd total, for both transistors. For each transistor, Pd = 350mW.
Electrical Characteristics
T
a
=25
°
C unless otherwise noted
Symbol
Parameter
Off Characteristics
BV
CEO
Collector-Emitter Voltage
BV
CBO
Collector-Base Voltage
BV
EBO
Emitter-Base Voltage
I
CBO
Collector Cut-off Current
Parameter
Value
160
180
6
600
0.7
150
- 55 ~ 150
180
Units
V
V
V
mA
W
°
C
°
C
°
C/W
Test Condition
Min.
Typ.
Max.
Units
I
C
= 1mA
I
C
= 10
μ
A
I
E
= 10
μ
A
V
CB
= 120V
V
CB
= 120V, T = 100
°
C
V
EB
= 4V
160
180
6
V
V
V
nA
μ
A
nA
50
50
50
I
EBO
On Characteristics
h
FE
Emitter Cut-off Current
DC Current Gain
V
CE
= 5V, I
C
= 1mA
V
CE
= 5V, I
C
= 10mA
V
CE
= 5V, I
C
= 50mA
I
C
= 10mA, I
B
= 1mA
I
C
= 50mA, I
B
= 5mA
I
C
= 10mA, I
B
= 1mA
I
C
= 50mA, I
B
= 5mA
80
80
30
250
V
CE
(sat)
Collector-Emitter Saturation Voltage
0.15
0.2
1
1
V
V
BE
(sat)
Base-Emitter Saturation Voltage
V
Small Signal Characteristics TYPICAL
C
ob
Output Capacitance
C
ib
Input Capacitance
f
T
Current gain Bandwidth Product
V
CB
= 10V, f = 1MHz
V
CB
= 0.5V, f = 1MHz
V
CE
= 10V, I
C
= 10mA
f = 100MHz
V
CE
= 5V, I
C
= 200
μ
A
f = 1MHz, R
S
= 2k
, B = 200Hz
V
CE
= 10V, I
C
= 1mA
f = 1KHz
6
20
300
pF
pF
MHz
100
NF
Noise Figure
8
dB
h
FE
Small Signal Current Gain
50
250
FMB5551
NPN General Purpose Amplifier
SuperSOT-6 Surface Mount Package
This device is designed for general purpose high voltage amplifiers
and gas discharge display driving.
Sourced from process 16.
See MMBT5551 for characteristics.
C1
E1
C2
B1
E2
B2
SuperSOT-6
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