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參數資料
| 型號： | FMBA0656 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN & PNP Complementary Dual Transistor SuperSOT- 6 Surface Mount Package |
| 中文描述： | 500 mA, 80 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SUPERSOT-6 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 28K |
| 代理商： | FMBA0656 |
FMBA0656
NPN & PNP Complementary Dual Transistor
SuperSOT- 6 Surface Mount Package
Absolute Maximum Ratings
T
A = 25°C unless otherwise noted
°C/W
180
Thermal Resistance, Junction to Ambient
R
θ
JA
*
Pd total, for both transistors. For each transistor, Pd = 350mW.
°C
150
Junction Temperature
T
J
°C
-55 to +150
Storage Temperature Range
T
STG
W
0.7
Power Dissipation @Ta = 25°C*
P
D
mA
500
Collector Current (continuous)
I
C
V
4
Emitter-Base Voltage
V
EBO
V
80
Collector-Base Voltage
V
CBO
V
80
Collector-Emitter Voltage
V
CEO
Units
Value
Parameter
Symbol
Electrical Characteristics
T
A = 25°C unless otherwise noted
V
4
Ie = 100 uA
Emitter to Base Voltage
BV
EBO
V
80
Ic = 100 uA
Collector to Base Voltage
BV
CBO
V
80
Ic = 1.0 mA
Collector to Emitter Voltage
BV
CEO
Units
Max
Min
Test Conditions
Parameter
Symbol
1997 Fairchild Semiconductor Corporation
Page 1 of 2
fmba0656.lwpPr33&73(Y3)
Package: SuperSOT-6
Device Marking:
.003
Note: The "
.
" (dot) signifies Pin 1
Transistor 1 is NPN device,
transistor 2 is PNP device.
This device was designed for general purpose amplifier applications at collector currents to 300mA.
Sourced from Process 33 (NPN) and Process 73 (PNP).
Discrete Power
&
Signal
Technologies
F
C2
E1
C1
B2
E2
B1
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