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參數(shù)資料
| 型號： | FMBA14 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN Multi-Chip Darlington Transistor |
| 中文描述： | 1200 mA, 30 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SUPERSOT-6 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 48K |
| 代理商： | FMBA14 |
F
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
V
(BR)CES
Collector-Emitter Breakdown Voltage
I
CBO
Collector-Cutoff Current
I
EBO
Emitter-Cutoff Current
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
I
C
= 100
μ
A, I
B
= 0
V
CB
= 30 V, I
E
= 0
V
EB
= 10 V, I
C
= 0
30
V
nA
nA
100
100
ON CHARACTERISTICS*
h
FE
DC Current Gain
I
C
= 10 mA, V
CE
= 5.0 V
I
C
= 100 mA, V
CE
= 5.0 V
I
C
= 100 mA, I
B
= 0.1 mA
I
C
= 100 mA, V
CE
= 5.0 V
10K
20K
V
CE(
sat
)
V
BE(
on
)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
1.5
2.0
V
V
SMALL SIGNAL CHARACTERISTICS
f
T
Current Gain - Bandwidth Product
*
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
I
C
= 10 mA, V
CE
= 10 V,
f = 100 MHz
200
MHz
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
0.001
0.01
0.1
1
0
50
100
150
200
250
I - COLLECTOR CURRENT (A)
h
F
25 °C
125 °C
- 40 °C
V = 5V
Collector-Emitter Saturation
Voltage vs Collector Current
1
10
100
1000
0
0.4
0.8
1.2
1.6
I - COLLECTOR CURRENT (mA)
V
C
25°C
- 40 oC
125 oC
β
= 1000
Base-Emitter Saturation
Voltage vs Collector Current
1
10
100
1000
0
0.4
0.8
1.2
1.6
2
I - COLLECTOR CURRENT (mA)
V
B
25 °C
- 40 oC
125 oC
β
= 1000
Base Emitter ON Voltage vs
Collector Current
1
10
100
1000
0
0.4
0.8
1.2
1.6
2
I - COLLECTOR CURRENT (mA)
V
B
V = 5V
- 40 oC
25 °C
125 oC
NPN Multi-Chip Darlington Transistor
(continued)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FMBA14_Q | 功能描述:達林頓晶體管 NPN Multi-ChipTrans Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| FMBA56 | 功能描述:兩極晶體管 - BJT PNP Multi-Chip Trans General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FMBA56_Q | 功能描述:兩極晶體管 - BJT PNP Multi-Chip Trans General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FMBB | 制造商:SCHURTER 制造商全稱:Schurter Inc. 功能描述:AC Filter 2-Stage, Broad Band Attenuation |
| FMBB-0116-0810 | 制造商:Schurter Electronic Components 功能描述:FMBB -0116-0810 - Bulk |
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