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參數資料
型號: FMBA56
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: PNP Multi-Chip General Purpose Amplifier
中文描述: 500 mA, 80 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: SUPERSOT-6
文件頁數: 2/4頁
文件大小: 42K
代理商: FMBA56
F
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown
Voltage*
V
(BR)CBO
Collector-Base Breakdown Voltage
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
CEO
Collector-Cutoff Current
I
CBO
Collector-Cutoff Current
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
I
C
= 1.0 mA, I
B
= 0
80
V
I
C
= 100
μ
A, I
E
= 0
I
E
= 100
μ
A, I
C
= 0
V
CE
= 60 V, I
B
= 0
V
CB
= 80 V, I
E
= 0
80
4.0
V
V
μ
A
μ
A
0.1
0.1
ON CHARACTERISTICS
h
FE
DC Current Gain
I
C
= 10 mA, V
CE
= 1.0 V
I
C
= 100 mA, V
CE
= 1.0 V
I
C
= 100 mA, I
B
= 10 mA
I
C
= 100 mA, V
CE
= 1.0 V
100
100
V
CE(
sat
)
V
BE(
on
)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
0.25
1.2
V
V
SMALL SIGNAL CHARACTERISTICS
f
T
Current Gain - Bandwidth Product
I
C
= 100 mA, V
CE
= 1.0 V,
f = 100 MHz
125
MHz
*
Pulse Test: Pulse Width
300
μ
s, Duty Cycle
2.0%
Typical Characteristics
PNP Multi-Chip General Purpose Amplifier
(continued)
Typical Pulsed Current Gain
vs Collector Current
0.001
0.01
0.1
50
100
150
200
250
300
I - COLLECTOR CURRENT (A)
h
F
- 40 oC
V = 1V
125 °C
25 °C
Collector-Emitter Saturation
Voltage vs Collector Current
10
100
0
0.2
0.4
0.6
0.8
I - COLLECTOR CURRENT (mA)
V
C
β
= 10
- 40 oC
125 °C
25 °C
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相關代理商/技術參數
參數描述
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