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參數資料
| 型號： | FMC6G15US60 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Compact & Complex Module |
| 中文描述： | 15 A, 600 V, N-CHANNEL IGBT |
| 封裝： | 21PM-AA, 21 PIN |
| 文件頁數： | 2/9頁 |
| 文件大小： | 657K |
| 代理商： | FMC6G15US60 |
2001 Fairchild Semiconductor Corporation
FMC6G15US60 Rev. A3
F
Electrical Characteristics of the IGBT
@ Inverter
T
C
= 25
°
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
CES
Collector-Emitter Breakdown Voltage
B
VCES
/
T
J
Voltage
I
CES
Collector Cut-Off Current
I
GES
G-E Leakage Current
V
GE
= 0V, I
C
= 250uA
600
--
--
V
Temperature Coeff. of Breakdown
V
GE
= 0V, I
C
= 1mA
--
0.6
--
V/
°
C
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
--
--
--
--
250
± 100
uA
nA
On Characteristics
V
GE(th)
G-E Threshold Voltage
V
CE(sat)
Collector to Emitter Saturation Voltage
I
C
= 15mA, V
CE
= V
GE
I
C
= 15A
,
V
GE
= 15V
5.0
--
6.0
2.2
8.5
2.8
V
V
Dynamic Characteristics
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
V
CE
= 30V
,
V
GE
= 0V,
f = 1MHz
--
--
--
948
101
33
--
--
--
pF
pF
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
ts
Total Switching Loss
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
ts
Total Switching Loss
V
CC
= 300 V, I
C
= 15A,
R
G
= 13
, V
GE
= 15V,
Inductive Load, T
C
= 25
°
C
--
--
--
--
--
--
--
--
--
--
--
--
--
--
17
33
44
118
0.32
0.36
0.68
20
34
48
212
0.34
0.7
1.04
--
--
65
200
--
--
0.95
--
--
70
350
--
--
1.45
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
V
CC
= 300 V, I
C
= 15A,
R
G
= 13
, V
GE
= 15V,
Inductive Load, T
C
= 125
°
C
T
sc
Short Circuit Withstand Time
V
CC
= 300 V, V
GE
= 15V
@
T
C
= 100
°
C
10
--
--
us
Q
g
Q
ge
Q
gc
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
V
CE
= 300 V, I
C
= 15A,
V
GE
= 15V
--
--
--
42
7
17
60
10
24
nC
nC
nC
相關PDF資料 |
PDF描述 |
|---|---|
| FMC6G20US60 | Multi-Function Generator RoHS Compliant: NA |
| FMC6G30US60 | Function Generator; Bandwidth Max:120MHz; Amplitude Accuracy :0.01dB; Frequency Max:120MHz; Frequency Min:0.1Hz; Waveforms:27 Built-in RoHS Compliant: NA |
| FMC6G50US60 | Signal Generator; Signal Generator Type:ARB/Frequency/Signal; Bandwidth Max:21.5MHz; Modulation Type:Amplitude/Frequency; Sweep Rate Range:0 Hz to 21.5 MHz lin/log; Sweep Time Range:1 mSec to 60 Sec; Accuracy:0.001% Frequency |
| FMC7G15US60 | Compact & Complex Module |
| FMC7G20US60 | Function Generator; Bandwidth Max:20MHz; Amplitude Accuracy :0.01dB; Frequency Max:20MHz; Frequency Min:0.1Hz; Waveforms:27 Built-in RoHS Compliant: NA |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FMC6G20US60 | 功能描述:IGBT 模塊 RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FMC6G30US60 | 功能描述:IGBT 模塊 RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FMC6G50US60 | 功能描述:IGBT 模塊 RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
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| FMC78A2200006 | 功能描述:搖臂開關與扳鈕開關 SPDT 6A 250V Mom-Off-MomBlack RoHS:否 制造商:C&K Components 觸點形式: 開關功能: 電流額定值:50 mA 電壓額定值 AC: 電壓額定值 DC:30 V 功率額定值: 端接類型: 執行器:Paddle 顏色: 安裝風格:Panel 端子密封: 觸點電鍍: 照明:Not Illuminated 照明顏色: |
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