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參數(shù)資料
| 型號(hào)： | FMC6G20US60 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | IGBT 晶體管 |
| 英文描述： | Multi-Function Generator RoHS Compliant: NA |
| 中文描述： | 20 A, 600 V, N-CHANNEL IGBT |
| 封裝： | 21PM-AA, 21 PIN |
| 文件頁(yè)數(shù)： | 6/9頁(yè) |
| 文件大小： | 648K |
| 代理商： | FMC6G20US60 |
2001 Fairchild Semiconductor Corporation
FMC6G20US60 Rev. A3
F
Fig 14. Gate Charge Characteristics
Fig 13. Switching Loss vs. Collector Current
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
Fig 17. RBSOA Characteristics
Fig 18. Transient Thermal Impedance
10
15
20
25
30
35
40
100
1000
Eoff
Eon
Eoff
Common Emitter
V
GE
=
±
15V, R
G
= 10
T
C
= 25
℃
━━
T
C
= 125
℃
------
S
Collector Current, I
C
[A]
1
10
100
1000
1
10
100
Safe Operating Area
V
GE
= 20V, T
C
= 100
℃
C
C
Collector-Emitter Voltage, V
CE
[V]
0.3
1
10
100
1000
0.01
0.1
1
10
100
Single Nonrepetitive
Pulse T
C
= 25
℃
Curves must be derated
linearly with increase
in temperature
50us
100us
1
DC Operation
I
C
MAX. (Continuous)
I
C
MAX. (Pulsed)
C
C
Collector-Emitter Voltage, V
CE
[V]
0
10
20
30
40
50
60
0
3
6
9
12
15
300 V
200 V
V
CC
= 100 V
Common Emitter
R
L
= 15
T
C
= 25
℃
G
G
Gate Charge, Q
g
[ nC ]
0
100
200
300
400
500
600
700
0.1
1
10
80
Single Nonrepetitive
Pulse T
≤
125
℃
V
GE
= 15V
R
G
= 10
C
Collector-Emitter Voltage, V
CE
[V]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
0.01
0.1
1
10
IGBT :
DIODE :
T
℃
/
Rectangular Pulse Duration [sec]
相關(guān)PDF資料 |
PDF描述 |
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| FMC6G30US60 | Function Generator; Bandwidth Max:120MHz; Amplitude Accuracy :0.01dB; Frequency Max:120MHz; Frequency Min:0.1Hz; Waveforms:27 Built-in RoHS Compliant: NA |
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| FMC7G30US60 | Arbitrary/Function Generator; Bandwidth Max:20MHz; Amplitude Accuracy :0.01dB; Frequency Max:20MHz; Frequency Min:0.1Hz; Waveforms:27 Built-in RoHS Compliant: NA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FMC6G30US60 | 功能描述:IGBT 模塊 RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FMC6G50US60 | 功能描述:IGBT 模塊 RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
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