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參數(shù)資料
| 型號(hào)： | FMC6G30US60 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Function Generator; Bandwidth Max:120MHz; Amplitude Accuracy :0.01dB; Frequency Max:120MHz; Frequency Min:0.1Hz; Waveforms:27 Built-in RoHS Compliant: NA |
| 中文描述： | 30 A, 600 V, N-CHANNEL IGBT |
| 封裝： | 21PM-BA, 21 PIN |
| 文件頁(yè)數(shù)： | 7/9頁(yè) |
| 文件大小： | 713K |
| 代理商： | FMC6G30US60 |
2000 Fairchild Semiconductor International
FMC6G30US60 Rev. A
F
5
10
15
20
25
30
0.5
1
10
20
Common Cathode
di/dt = 60A/us
T
C
= 25
℃
T
C
= 100
℃
I
rr
T
rr
P
R
Forward Current, I
F
[A]
Fig 20. Reverse Recovery Characteristics
Fig 19. Forward Characteristics
0
1
2
3
4
0
10
20
30
40
50
60
70
80
90
Common Cathode
V
GE
= 0V
T
C
= 25
℃
T
C
= 125
℃
F
Forward Voltage, V
F
[V]
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| FMC6G50US60 | Signal Generator; Signal Generator Type:ARB/Frequency/Signal; Bandwidth Max:21.5MHz; Modulation Type:Amplitude/Frequency; Sweep Rate Range:0 Hz to 21.5 MHz lin/log; Sweep Time Range:1 mSec to 60 Sec; Accuracy:0.001% Frequency |
| FMC7G15US60 | Compact & Complex Module |
| FMC7G20US60 | Function Generator; Bandwidth Max:20MHz; Amplitude Accuracy :0.01dB; Frequency Max:20MHz; Frequency Min:0.1Hz; Waveforms:27 Built-in RoHS Compliant: NA |
| FMC7G30US60 | Arbitrary/Function Generator; Bandwidth Max:20MHz; Amplitude Accuracy :0.01dB; Frequency Max:20MHz; Frequency Min:0.1Hz; Waveforms:27 Built-in RoHS Compliant: NA |
| FMC7G50US60 | Function Generator; Bandwidth Max:40MHz; Amplitude Accuracy :0.01dB; Frequency Max:40MHz; Frequency Min:0.1Hz; Waveforms:27 Built-in RoHS Compliant: NA |
相關(guān)代理商/技術(shù)參數(shù) |
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| FMC7G10US60 | 功能描述:IGBT 模塊 RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
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