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參數(shù)資料
| 型號(hào)： | FMC6G50US60 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Signal Generator; Signal Generator Type:ARB/Frequency/Signal; Bandwidth Max:21.5MHz; Modulation Type:Amplitude/Frequency; Sweep Rate Range:0 Hz to 21.5 MHz lin/log; Sweep Time Range:1 mSec to 60 Sec; Accuracy:0.001% Frequency |
| 中文描述： | 50 A, 600 V, N-CHANNEL IGBT |
| 封裝： | 21PM-BA, 21 PIN |
| 文件頁(yè)數(shù)： | 4/9頁(yè) |
| 文件大小： | 665K |
| 代理商： | FMC6G50US60 |
2001 Fairchild Semiconductor Corporation
FMC6G50US60 Rev. A3
F
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage
Characteristics
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
Fig 5. Saturation Voltage vs. V
GE
Fig 6. Saturation Voltage vs. V
GE
0
2
4
6
8
0
20
40
60
80
100
120
140
20V
12V
15V
V
GE
= 10V
Common Emitter
T
C
= 25
℃
C
C
Collector - Emitter Voltage, V
CE
[V]
1
10
0
20
40
60
80
100
120
140
Common Emitter
V
GE
= 15V
T
C
= 25
℃
━━
T
C
= 125
℃
------
C
C
Collector - Emitter Voltage, V
CE
[V]
-50
0
50
100
150
0
1
2
3
4
5
50A
100A
I
C
= 30A
Common Emitter
V
GE
= 15V
C
C
Case Temperature, T
C
[
℃
]
0
4
8
12
16
20
0
4
8
12
16
20
Common Emitter
T
C
= 25
℃
100A
50A
I
C
= 30A
C
C
Gate - Emitter Voltage, V
GE
[V]
0
4
8
12
16
20
0
4
8
12
16
20
Common Emitter
T
C
= 125
℃
100A
50A
I
C
= 30A
C
C
Gate - Emitter Voltage, V
GE
[V]
0
10
20
30
40
50
60
1
10
100
1000
Duty cycle : 50%
T
= 100
℃
Power Dissipation = 70W
V
= 300V
Load Current : peak of square wave
Frequency [KHz]
L
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