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參數(shù)資料
| 型號(hào)： | FMG2G150US60 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Molding Type Module |
| 中文描述： | 150 A, 600 V, N-CHANNEL IGBT |
| 封裝： | PLASTIC, 7PM-HA, 7 PIN |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大小： | 714K |
| 代理商： | FMG2G150US60 |
2003 Fairchild Semiconductor Corporation
FMG2G150US60 Rev. A
IGBT
F
FMG2G150US60
Molding Type Module
General Description
Fairchild IGBT Power Module provides low conduction and
switching losses as well as short circuit ruggedness. It’s
designed for the applications such as motor control,
uninterrupted power supplies (UPS) and general inverters
where short-circuit ruggedness is required.
Features
Short Circuit Rated Time; 10us @ T
C
=100
°
C, V
GE
= 15V
High Speed Switching
Low Saturation Voltage : V
CE
(sat) = 2.1 V @ I
C
= 150A
High Input Impedance
Fast & Soft Anti-Parallel FWD
UL Certified No.E209204
Application
AC & DC Motor Controls
General Purpose Inverters
Robotics
Servo Controls
UPS
Internal Circuit Diagram
C1
E2
G1
E1
G2
E2
E1/C2
Package Code : 7PM-HA
Absolute Maximum Ratings
T
C
= 25
°
C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Symbol
Description
FMG2G150US60
600
± 20
150
300
150
300
595
10
-40 to +150
-40 to +125
2500
4.0
4.0
Units
V
V
A
A
A
A
W
us
°
C
°
C
V
N.m
N.m
V
CES
V
GES
I
C
I
CM (1)
I
F
I
FM
P
D
T
SC
T
J
T
STG
V
ISO
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Short Circuit Withstand Time
Operating Junction Temperature
Storage Temperature Range
Isolation Voltage
Power Terminal Screw : M5
Mounting Screw : M6
@ T
C
= 80
°
C
@ T
C
= 80
°
C
@ T
C
= 25
°
C
@ T
C
= 100
°
C
@ AC 1minute
Mounting Torque
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FMG2G200US60 | Molding Type Module |
| FMG2G300LS60E | Molding Type Module |
| FMG2G300US60E | Molding Type Module |
| FMG2G300US60 | Molding Type Module |
| FMG2G400LS60 | Molding Type Module |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FMG2G150US60E | 功能描述:IGBT 模塊 600V/150A/Module RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FMG2G200US60 | 功能描述:IGBT 模塊 Molding Type Module RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FMG2G300LS60E | 功能描述:IGBT 模塊 600V 300A IGBT Module RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FMG2G300US60 | 功能描述:IGBT 模塊 Molding Type Module RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FMG2G300US60E | 功能描述:IGBT 模塊 Molding Type Module RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
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