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參數資料
| 型號： | FMG2G50US60 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Arbitrary/Function Generator; Bandwidth Max:80MHz; Amplitude Accuracy :0.01dB; Frequency Max:80MHz; Frequency Min:0.1Hz; Waveforms:27 Built-in RoHS Compliant: NA |
| 中文描述： | 50 A, 600 V, N-CHANNEL IGBT |
| 封裝： | 7PM-GA, 7 PIN |
| 文件頁數： | 2/7頁 |
| 文件大小： | 463K |
| 代理商： | FMG2G50US60 |
2004 Fairchild Semiconductor Corporation
FMG2G50US120 Rev. A
F
Electrical Characteristics of IGBT
T
C
= 25
°
C unless otherwise noted
Electrical Characteristics of DIODE
T
C
= 25
°
C unless otherwise noted
Thermal Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
CES
Collector-Emitter Breakdown Voltage
B
VCES
/
T
J
Voltage
I
CES
Collector Cut-Off Current
I
GES
Gate - Emitter Leakage Current
V
GE
= 0V, I
C
= 3mA
1200
--
--
V
Temperature Coeff. of Breakdown
V
GE
= 0V, I
C
= 1mA
--
0.6
--
V/
°
C
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
--
--
--
--
3
mA
nA
± 100
On Characteristics
V
GE(th)
Gate - Emitter Threshold Voltage
V
CE(sat)
Collector to Emitter Saturation Voltage
I
C
=50mA, V
CE
= V
GE
I
C
= 50A
,
V
GE
= 15V
5.0
--
7.0
2.6
8.5
3.0
V
V
Switching Characteristics
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
V
CC
= 600 V, I
C
=50A,
R
G
= 10
, V
GE
= 15V,
Inductive Load, T
C
= 25
°
C
--
--
--
--
--
--
--
--
--
--
--
--
180
80
400
65
4.68
3.48
175
75
390
120
5.6
4.4
--
--
--
ns
ns
ns
ns
mJ
mJ
ns
ns
ns
ns
mJ
mJ
150
--
--
--
--
--
--
--
--
V
CC
= 600 V, I
C
= 50A,
R
G
=10
, V
GE
= 15V,
Inductive Load, T
C
= 125
°
C
T
sc
Short Circuit Withstand Time
V
CC
= 600 V, V
GE
= 15V
@
T
C
= 100
°
C
10
--
--
us
Q
g
Q
ge
Q
gc
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
V
CE
= 300 V, I
C
=50A,
V
GE
= 15V
--
--
--
400
60
210
--
--
--
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
s
V
FM
Diode Forward Voltage
I
F
= 50A
T
C
= 25
°
C
T
C
= 125
°
C
T
C
= 25
°
C
T
C
= 125
°
C
T
C
= 25
°
C
T
C
= 125
°
C
T
C
= 25
°
C
T
C
= 125
°
C
--
--
--
--
--
--
--
--
2.3
2.2
160
220
29
36
2320
3960
3.0
--
--
--
--
--
--
--
V
t
rr
Diode Reverse Recovery Time
I
F
= 50A
di / dt = 700 A/us
ns
I
rr
Diode Peak Reverse Recovery
Current
A
Q
rr
Diode Reverse Recovery Charge
nC
Symbol
R
θ
JC
R
θ
JC
R
θ
JC
Weight
Parameter
Typ.
--
--
0.035
240
Max.
0.39
0.47
--
--
Units
°
C
/
W
°
C
/
W
°
C
/
W
g
Junction-to-Case (IGBT Part, per 1/2 Module)
Junction-to-Case (DIODE Part, per 1/2 Module)
Case-to-Sink (Conductive grease applied)
Weight of Module
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| FMG2G75US120 | 功能描述:IGBT 晶體管 1200V 75A IGBT Module RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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