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參數(shù)資料
| 型號： | FMG2G75US60 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Molding Type Module |
| 中文描述： | 75 A, 600 V, N-CHANNEL IGBT |
| 封裝： | 7PM-GA, 7 PIN |
| 文件頁數(shù)： | 3/7頁 |
| 文件大小： | 500K |
| 代理商： | FMG2G75US60 |
2004 Fairchild Semiconductor Corporation
FMG2G75US120 Rev. A
F
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
20
40
60
80
100
120
140
160
C
ollector - Em
itter Voltage, V
C
E
[V]
C
o
u
C
]
Common Emitter
V
GE
= 15V
T
C
= 25
T
C
= 125
------
℃ ℃℃
℃
25
50
75
100
125
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
150A
100A
75A
I
C
= 40A
C
o
u
C
C
ase Tem
perature, T
C
[
0
C
]
Common Emitter
V
GE
= 15V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
20
40
60
80
100
120
140
160
V
GE
= 10V
12V
15V
20V
C
ollector - Em
itter Voltage, V
C
E
[V]
C
o
u
C
]
Common Emitter
T
C
= 125
℃
0.0
0.5
C
ollector - Em
1.0
1.5
2.0
2.5
3.0
3.5
0
20
40
60
80
100
120
140
160
20V
12V
15V
V
GE
= 10V
C
o
u
C
]
itter Voltage, V
C
E
[V]
Common Emitter
T
C
= 25
℃
Fig 5. Turn-On Characteristics vs.
Collector Current
Fig 6. Turn-Off Characteristics vs.
Collector Current
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage
Characteristics
Fig 3. Typical Saturation Voltage
Characteristics
Fig 4. Saturation Voltage vs. Case
Temperature at Variant Current Level
30
40
50
ollector C
60
70
80
90
100
10
100
1000
Tr
Ton
C
urrent, I
C
[A
]
S
i
e
Common Emitter
V
GE
= ± 15 V, R
G
= 10
T
C
= 25
℃ ℃℃
T
C
= 125
------
℃
30
40
50
C
60
70
80
90
100
10
100
1000
Tf
Toff
ollector C
urrent, I
C
[A
]
S
i
e
Common Emitter
V
GE
= ± 15 V, R
G
= 10
T
C
= 25
℃ ℃℃
T
C
= 125
------
℃
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